P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Features and benefits
Applications
MOSFET P-CH 12V 8.2A DFN2020MD-6
MOSFET P-CH 12V 8.2A DFN2020MD-6
P-Channel 12V 8.2A (Ta) 1.7W (Ta), 12.5W (Tc) Surface Mount DFN2020MD-6
MOSFET P-CH 12V 8.2A DFN2020MD-6
MOSFET P-CH 12V 8.2A DFN2020MD-6
MOSFET, P-CH, -12V, -8.2A, SOT-1220; Transistor Polarity:P Channel; Continuous Drain Current Id:-8.2A; Drain Source Voltage Vds:-12V; On Resistance Rds(on):0.015ohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs:-700mV; PowerRoHS Compliant: Yes
| Nexperia B.V. | DigiKey | Shenzhen Shengyu Electronics Technology Limited | ODG (Origin Data Global) | Newark, An Avnet Company | |
|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | PMPB15XPAX | 1727-PMPB15XPAXDKR-ND | PMPB15XPAX | PMPB15XPAX | 78AC6353 |
| Product Name | 12 V, P-channel Trench MOSFET | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Single FETs, MOSFETs | Mosfet, P-Ch, -12V, -8.2A, Sot-1220; Transistor Polarity Nexperia |
| MOSFET Operating Mode | Enhancement | ||||
| V(BR)DSS | -12 volts | 12 volts | |||
| IDSS | -8200 milliamps | 8200 milliamps | -8200 milliamps | ||
| VGS(off) | 12 volts | ||||
| PD | 1.7 milliwatts | 1700 milliwatts |