Nexperia B.V. 12 V, P-channel Trench MOSFET PMPB15XPAX

Description
P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Low threshold voltage Trench MOSFET technology Side wettable flanks for optical solder inspection Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm AEC-Q101 qualified Applications Relay driver High-speed line driver High-side load switch Switching circuits
Request a Quote Datasheet
Description
P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Low threshold voltage Trench MOSFET technology Side wettable flanks for optical solder inspection Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm AEC-Q101 qualified Applications Relay driver High-speed line driver High-side load switch Switching circuits
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
12 V, P-channel Trench MOSFET - PMPB15XPAX - Nexperia B.V.
Nijmegen, Netherlands
12 V, P-channel Trench MOSFET
PMPB15XPAX
12 V, P-channel Trench MOSFET PMPB15XPAX
P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Low threshold voltage Trench MOSFET technology Side wettable flanks for optical solder inspection Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm AEC-Q101 qualified Applications Relay driver High-speed line driver High-side load switch Switching circuits

P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Features and benefits

  • Low threshold voltage
  • Trench MOSFET technology
  • Side wettable flanks for optical solder inspection
  • Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm
  • AEC-Q101 qualified

Applications

  • Relay driver
  • High-speed line driver
  • High-side load switch
  • Switching circuits
Supplier's Site Datasheet
Single FETs, MOSFETs - 1727-PMPB15XPAXDKR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1727-PMPB15XPAXDKR-ND
Single FETs, MOSFETs 1727-PMPB15XPAXDKR-ND
MOSFET P-CH 12V 8.2A DFN2020MD-6

MOSFET P-CH 12V 8.2A DFN2020MD-6

Buy Now Datasheet
Single FETs, MOSFETs - 1727-PMPB15XPAXCT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1727-PMPB15XPAXCT-ND
Single FETs, MOSFETs 1727-PMPB15XPAXCT-ND
MOSFET P-CH 12V 8.2A DFN2020MD-6

MOSFET P-CH 12V 8.2A DFN2020MD-6

Buy Now Datasheet
Single FETs, MOSFETs - 1727-PMPB15XPAXTR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1727-PMPB15XPAXTR-ND
Single FETs, MOSFETs 1727-PMPB15XPAXTR-ND
P-Channel 12V 8.2A (Ta) 1.7W (Ta), 12.5W (Tc) Surface Mount DFN2020MD-6

P-Channel 12V 8.2A (Ta) 1.7W (Ta), 12.5W (Tc) Surface Mount DFN2020MD-6

Buy Now Datasheet
Mosfet, P-Ch, -12V, -8.2A, Sot-1220; Transistor Polarity Nexperia - 78AC6353 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, P-Ch, -12V, -8.2A, Sot-1220; Transistor Polarity Nexperia
78AC6353
Mosfet, P-Ch, -12V, -8.2A, Sot-1220; Transistor Polarity Nexperia 78AC6353
MOSFET, P-CH, -12V, -8.2A, SOT-1220; Transistor Polarity:P Channel; Continuous Drain Current Id:-8.2A; Drain Source Voltage Vds:-12V; On Resistance Rds(on):0.015ohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs:-700mV; PowerRoHS Compliant: Yes

MOSFET, P-CH, -12V, -8.2A, SOT-1220; Transistor Polarity:P Channel; Continuous Drain Current Id:-8.2A; Drain Source Voltage Vds:-12V; On Resistance Rds(on):0.015ohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs:-700mV; PowerRoHS Compliant: Yes

Supplier's Site Datasheet
Single FETs, MOSFETs - PMPB15XPAX - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
PMPB15XPAX
Single FETs, MOSFETs PMPB15XPAX
MOSFET P-CH 12V 8.2A DFN2020MD-6

MOSFET P-CH 12V 8.2A DFN2020MD-6

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - PMPB15XPAX - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
PMPB15XPAX
Discrete Semiconductor Products - Transistors - FETs, MOSFETs PMPB15XPAX
MOSFET P-CH 12V 8.2A DFN2020MD-6

MOSFET P-CH 12V 8.2A DFN2020MD-6

Supplier's Site

Technical Specifications

  Nexperia B.V. DigiKey Newark, An Avnet Company ODG (Origin Data Global) Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number PMPB15XPAX 1727-PMPB15XPAXDKR-ND 78AC6353 PMPB15XPAX PMPB15XPAX
Product Name 12 V, P-channel Trench MOSFET Single FETs, MOSFETs Mosfet, P-Ch, -12V, -8.2A, Sot-1220; Transistor Polarity Nexperia Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs
MOSFET Operating Mode Enhancement
V(BR)DSS -12 volts 12 volts
IDSS -8200 milliamps -8200 milliamps 8200 milliamps
VGS(off) 12 volts
PD 1.7 milliwatts 1700 milliwatts
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