Nexperia B.V. 20 V, P-channel Trench MOSFET PMV27UPEAR

Description
P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Trench MOSFET technology Low threshold voltage Very fast switching Enhanced power dissipation capability: Ptot = 980 mW ElectroStatic Discharge (ESD) protection 2 kV HBM AEC-Q101 qualified Applications LED driver Power management High-side loadswitch Switching circuits
Request a Quote Datasheet
Description
P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Trench MOSFET technology Low threshold voltage Very fast switching Enhanced power dissipation capability: Ptot = 980 mW ElectroStatic Discharge (ESD) protection 2 kV HBM AEC-Q101 qualified Applications LED driver Power management High-side loadswitch Switching circuits
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
20 V, P-channel Trench MOSFET - PMV27UPEAR - Nexperia B.V.
Nijmegen, Netherlands
20 V, P-channel Trench MOSFET
PMV27UPEAR
20 V, P-channel Trench MOSFET PMV27UPEAR
P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Trench MOSFET technology Low threshold voltage Very fast switching Enhanced power dissipation capability: Ptot = 980 mW ElectroStatic Discharge (ESD) protection 2 kV HBM AEC-Q101 qualified Applications LED driver Power management High-side loadswitch Switching circuits

P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Features and benefits

  • Trench MOSFET technology
  • Low threshold voltage
  • Very fast switching
  • Enhanced power dissipation capability: Ptot = 980 mW
  • ElectroStatic Discharge (ESD) protection 2 kV HBM
  • AEC-Q101 qualified

Applications

  • LED driver
  • Power management
  • High-side loadswitch
  • Switching circuits
Supplier's Site Datasheet
Singapore, Singapore
P-Channel 20 V MOSFET Transistor
278-PMV27UPEAR
P-Channel 20 V MOSFET Transistor 278-PMV27UPEAR
PMV27UPEA - 20 V, P-channel Trench MOSFET TO-236 3-Pin Product overview: PMV27UPEAR from Nexperia is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include P-Channel, 20 V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20 V, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-PMV27UPEAR can be used for catalog matching and distributor lookup.

PMV27UPEA - 20 V, P-channel Trench MOSFET TO-236 3-Pin Product overview: PMV27UPEAR from Nexperia is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include P-Channel, 20 V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20 V, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-PMV27UPEAR can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - PMV27UPEAR - 1089784-PMV27UPEAR - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - PMV27UPEAR
1089784-PMV27UPEAR
TRANSISTORS - Transistors - FETs, MOSFETs - RF - PMV27UPEAR 1089784-PMV27UPEAR
Manufacturer: Nexperia USA Inc. Win Source Part Number: 1089784-PMV27UPEAR Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 490mW (Ta), 4.15W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-236AB (SOT23) Dimension: TO-236-3, SC-59, SOT-23-3 Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 4.5A (Ta) Gate-Source Threshold Voltage: 950mV @ 250μA Max Gate Charge: 22.1nC @ 4.5V Max Input Capacitance: 1820pF @ 10V Maximum Gate-Source Voltage: ±8V Maximum Rds On at Id,Vgs: 32 mOhm @ 4.5A, 4.5V Popularity: Medium Fake Threat In the Open Market: 33 pct. Supply and Demand Status: Balance

Manufacturer: Nexperia USA Inc.
Win Source Part Number: 1089784-PMV27UPEAR
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 490mW (Ta), 4.15W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-236AB (SOT23)
Dimension: TO-236-3, SC-59, SOT-23-3
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 4.5A (Ta)
Gate-Source Threshold Voltage: 950mV @ 250μA
Max Gate Charge: 22.1nC @ 4.5V
Max Input Capacitance: 1820pF @ 10V
Maximum Gate-Source Voltage: ±8V
Maximum Rds On at Id,Vgs: 32 mOhm @ 4.5A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 33 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Single FETs, MOSFETs - 1727-PMV27UPEARCT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1727-PMV27UPEARCT-ND
Single FETs, MOSFETs 1727-PMV27UPEARCT-ND
P-Channel 20V 4.5A (Ta) 490mW (Ta), 4.15W (Tc) Surface Mount TO-236AB

P-Channel 20V 4.5A (Ta) 490mW (Ta), 4.15W (Tc) Surface Mount TO-236AB

Buy Now Datasheet
Single FETs, MOSFETs - 1727-PMV27UPEARTR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1727-PMV27UPEARTR-ND
Single FETs, MOSFETs 1727-PMV27UPEARTR-ND
P-Channel 20V 4.5A (Ta) 490mW (Ta), 4.15W (Tc) Surface Mount TO-236AB

P-Channel 20V 4.5A (Ta) 490mW (Ta), 4.15W (Tc) Surface Mount TO-236AB

Buy Now Datasheet
Single FETs, MOSFETs - 1727-PMV27UPEARDKR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1727-PMV27UPEARDKR-ND
Single FETs, MOSFETs 1727-PMV27UPEARDKR-ND
P-Channel 20V 4.5A (Ta) 490mW (Ta), 4.15W (Tc) Surface Mount TO-236AB

P-Channel 20V 4.5A (Ta) 490mW (Ta), 4.15W (Tc) Surface Mount TO-236AB

Buy Now Datasheet
Sheung Wan, Hong Kong
MOSFET PMV27UPEA/TO-236AB/R EEL 7" Q3/

MOSFET PMV27UPEA/TO-236AB/REEL 7" Q3/

Buy Now Datasheet
Mosfet, PCh, -20V, -4.5A, To-236Ab; Transistor Polarity Nexperia - 99Y2084 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, PCh, -20V, -4.5A, To-236Ab; Transistor Polarity Nexperia
99Y2084
Mosfet, PCh, -20V, -4.5A, To-236Ab; Transistor Polarity Nexperia 99Y2084
MOSFET, P- CH, -20V, -4.5A, TO-236AB; Transistor Polarity:P Channel; Continuous Drain Current Id:-4.5A; Drain Source Voltage Vds:-20V; On Resistance Rds(on):0.027ohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs:-700mV; RoHS Compliant: Yes

MOSFET, P- CH, -20V, -4.5A, TO-236AB; Transistor Polarity:P Channel; Continuous Drain Current Id:-4.5A; Drain Source Voltage Vds:-20V; On Resistance Rds(on):0.027ohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs:-700mV; RoHS Compliant: Yes

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - PMV27UPEAR - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
PMV27UPEAR
Discrete Semiconductor Products - Transistors - FETs, MOSFETs PMV27UPEAR
MOSFET P-CH 20V 4.5A TO236AB

MOSFET P-CH 20V 4.5A TO236AB

Supplier's Site
Single FETs, MOSFETs - PMV27UPEAR - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
PMV27UPEAR
Single FETs, MOSFETs PMV27UPEAR
MOSFET P-CH 20V 4.5A TO236AB

MOSFET P-CH 20V 4.5A TO236AB

Supplier's Site Datasheet
Futian, Shenzhen, China
Triode/MOS Tube/Transistor >> MOSFETs
PMV27UPEAR
Triode/MOS Tube/Transistor >> MOSFETs PMV27UPEAR
20V 4.5A 32mΩ@4.5A,4.5V 950mV@250uA P Channel SOT-23 MOSFETs ROHS

20V 4.5A 32mΩ@4.5A,4.5V 950mV@250uA P Channel SOT-23 MOSFETs ROHS

Supplier's Site Datasheet

Technical Specifications

  Nexperia B.V. ERSAELECTRONICS PTE. LTD. Win Source Electronics DigiKey VAST STOCK CO., LIMITED Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited ODG (Origin Data Global) LCSC Electronics Technology (HK) Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number PMV27UPEAR 278-PMV27UPEAR 1089784-PMV27UPEAR 1727-PMV27UPEARCT-ND PMV27UPEAR 99Y2084 PMV27UPEAR PMV27UPEAR PMV27UPEAR
Product Name 20 V, P-channel Trench MOSFET P-Channel 20 V MOSFET Transistor TRANSISTORS - Transistors - FETs, MOSFETs - RF - PMV27UPEAR Single FETs, MOSFETs MOSFET Mosfet, PCh, -20V, -4.5A, To-236Ab; Transistor Polarity Nexperia Discrete Semiconductor Products - Transistors - FETs, MOSFETs Single FETs, MOSFETs Triode/MOS Tube/Transistor >> MOSFETs
MOSFET Operating Mode Enhancement
V(BR)DSS -20 volts 20 volts 20 volts 20 volts
IDSS -5600 milliamps -4500 milliamps 4500 milliamps
VGS(off) 8 volts 0.9500 volts
PD 490 milliwatts 490 to 4150 milliwatts 490 milliwatts 490 milliwatts
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