P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) surface-mounted plastic package using Trench MOSFET technology. The device has a drain-source voltage rating of -20 V, a gate-source voltage range of -8 V to 8 V, and a continuous drain current of -4 A at 25 °C with VGS = -4.5 V. The drain-source on-state resistance is 32 to 36 mΩ under the same conditions. Total power dissipation is 510 mW at 25 °C, with a junction temperature range of -55 °C to 150 °C. Applications include relay driver, high-side load switch, high-speed line driver, and switching circuits.
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Features and benefits
Applications
Manufacturer: Nexperia USA Inc.
Win Source Part Number: 1089789-PMV32UP,215
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 510mW (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-236AB (SOT23)
Dimension: TO-236-3, SC-59, SOT-23-3
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 4A (Ta)
Gate-Source Threshold Voltage: 950mV @ 250μA
Max Gate Charge: 15.5nC @ 4.5V
Max Input Capacitance: 1890pF @ 10V
Maximum Gate-Source Voltage: ±8V
Maximum Rds On at Id,Vgs: 36 mOhm @ 2.4A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 54 pct.
Supply and Demand Status: Sufficient
P-Channel 20V 4A (Ta) 510mW (Ta) Surface Mount TO-236AB
P-Channel 20V 4A (Ta) 510mW (Ta) Surface Mount TO-236AB
P-Channel 20V 4A (Ta) 510mW (Ta) Surface Mount TO-236AB
PMV32UP - 20 V, 4 A P-channel Trench MOSFET TO-236 3-Pin Product overview: PMV32UP,215 from Nexperia is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include P-Channel, 20 V, 4 A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20 V, 4 A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-PMV32UP,215 can be used for catalog matching and distributor lookup.
MOSFET P-CH 20V 4A TO236AB
MOSFET, P CHANNEL, 20V, 4A, SOT23; Channel Type:P Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:4A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V; Gate Source Threshold Voltage Max:700mV RoHS Compliant: Yes
PMV32UP - 20 V, 4 A P-CHANNEL TR
| Nexperia B.V. | Win Source Electronics | DigiKey | ERSAELECTRONICS PTE. LTD. | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | ODG (Origin Data Global) | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | PMV32UP,215 | 1089789-PMV32UP,215 | 1727-PMV32UP,215CT-ND | 278-PMV32UP,215 | PMV32UP,215 | 47T2356 | PMV32UP,215 |
| Product Name | 30 V, N-channel Trench MOSFET | TRANSISTORS - Transistors - FETs, MOSFETs - RF - PMV32UP,215 | Single FETs, MOSFETs | P-Channel 20 V 4 A MOSFET Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, P Channel, 20V, 4A, Sot23; Channel Type Nexperia | Single FETs, MOSFETs |
| MOSFET Operating Mode | Enhancement | ||||||
| Package Type | SOT23; SOT23 SOT23 | SOT3; SOT23; TO-236AB (SOT23) | SOT23; TO-236-3, SC-59, SOT-23-3 | SOT23; TO-236-3, SC-59, SOT-23-3 | TO-3 | SOT23; TO-236-3, SC-59, SOT-23-3 | |
| Polarity | P-Channel; P-Channel | P-Channel | P-Channel | P-Channel; P-Channel | |||
| V(BR)DSS | 20 volts | 20 volts | |||||
| PD | 510 milliwatts | 510 milliwatts |
