N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Features and benefits
Applications
Manufacturer: Nexperia USA Inc.
Win Source Part Number: 852635-PMV50ENEAR
Series: Automotive, AEC-Q101
Features: 30 V
Package: Reel - TR
Family Name: PMV50
Categories: Discrete Semiconductor Products
ECCN: EAR99
Popularity: Medium
Fake Threat In the Open Market: 86 pct.
Supply and Demand Status: Limited
Quantity per package: 3000
MSL Level: 1 (Unlimited)
Estimated Pruduction Lead Time: 25 Weeks
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Other Part Number: 1727-2533-1, 568-62972-6-ND, 1727-2533-2, 568-12972-6-ND, 568-12972-1, 568-12972-1-ND, 568-12972-2-ND, PMV50ENEAR-ND, 1727-2533-6, 568-62972-6, 934068715215
MOSFET N-CH 30V 3.9A TO236AB Product overview: PMV50ENEAR from Nexperia is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 3.9A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 3.9A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-PMV50ENEAR can be used for catalog matching and distributor lookup.
N-Channel 30V 3.9A (Ta) 510mW (Ta), 3.9W (Tc) Surface Mount TO-236AB
N-Channel 30V 3.9A (Ta) 510mW (Ta), 3.9W (Tc) Surface Mount TO-236AB
N-Channel 30V 3.9A (Ta) 510mW (Ta), 3.9W (Tc) Surface Mount TO-236AB
MOSFET PMV50ENEA/TO-236AB/R
MOSFET N-CH 30V 3.9A TO236AB
MOSFET N-CH 30V 3.9A TO236AB
| Nexperia B.V. | Win Source Electronics | ERSAELECTRONICS PTE. LTD. | DigiKey | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | ODG (Origin Data Global) | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | PMV50ENEAR | 852635-PMV50ENEAR | 278-PMV50ENEAR | 1727-2533-6-ND | PMV50ENEAR | PMV50ENEAR | PMV50ENEAR |
| Product Name | 30 V, N-channel Trench MOSFET | TRANSISTORS - Transistors - FETs, MOSFETs - RF - PMV50ENEAR | 30V 3.9A MOSFET Transistor | Single FETs, MOSFETs | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Single FETs, MOSFETs |
| MOSFET Operating Mode | Enhancement | Enhancement | |||||
| V(BR)DSS | 30 volts | 30 volts | 30 volts | ||||
| IDSS | 3900 milliamps | 3900 milliamps | |||||
| VGS(off) | 20 volts | ||||||
| PD | 510 milliwatts | 3.9 milliwatts | 510 milliwatts |
