P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Features and benefits
Applications
MOSFET P-CH 20V 4.5A TO236AB
P-Channel 20V 4.5A (Ta) 490mW (Ta), 4.15W (Tc) Surface Mount TO-236AB
P-Channel 20V 4.5A (Ta) 490mW (Ta), 4.15W (Tc) Surface Mount TO-236AB
P-Channel 20V 4.5A (Ta) 490mW (Ta), 4.15W (Tc) Surface Mount TO-236AB
PMV27UPE - 20 V, P-channel Trench MOSFET TO-236 3-Pin Product overview: PMV27UPER from Nexperia is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include P-Channel, 20 V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20 V, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-PMV27UPER can be used for catalog matching and distributor lookup.
Manufacturer: Nexperia USA Inc.
Win Source Part Number: 1089783-PMV27UPER
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 490mW (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-236AB (SOT23)
Dimension: TO-236-3, SC-59, SOT-23-3
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 4.5A (Ta)
Gate-Source Threshold Voltage: 950mV @ 250μA
Max Gate Charge: 22.1nC @ 4.5V
Max Input Capacitance: 1820pF @ 10V
Maximum Gate-Source Voltage: ±8V
Maximum Rds On at Id,Vgs: 32 mOhm @ 4.5A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 50 pct.
Supply and Demand Status: Sufficient
MOSFET P-CH 20V 4.5A TO236AB
MOSFET 20V P-channel Trench MOSFET
MOSFET, N-CH, 20V, 4.5A, TO-236AB ROHS COMPLIANT: YES
| Nexperia B.V. | ODG (Origin Data Global) | DigiKey | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | PMV27UPER | PMV27UPER | 1727-2304-2-ND | 278-PMV27UPER | 1089783-PMV27UPER | PMV27UPER | PMV27UPER | 74AH1166 |
| Product Name | 20 V, P-channel Trench MOSFET | Single FETs, MOSFETs | Single FETs, MOSFETs | P-Channel 20 V MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - PMV27UPER | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | Mosfet, N-Ch, 20V, 4.5A, To-236Ab Rohs Compliant Nexperia |
| Polarity | P-Channel | P-Channel; P-Channel | P-Channel | P-Channel; P-Channel | ||||
| MOSFET Operating Mode | Enhancement | |||||||
| V(BR)DSS | -20 volts | 20 volts | 20 volts | |||||
| IDSS | -5600 milliamps | 4500 milliamps | ||||||
| VGS(off) | -0.7000 volts |
