Nexperia B.V. 30 V, single P-channel Trench MOSFET PMPB47XP,115

The Nexperia N-Channel MOSFET, part number PMPB47XP, is designed for applications requiring a maximum drain-source voltage of 30V and a continuous drain current of up to 4A. It features a compact DFN2020MD-6 package, measuring 2 x 2 x 0.65 mm, which allows for efficient space utilization in circuit designs. The device utilizes Trench MOSFET technology, providing low on-state resistance of 47 mOc at a gate-source voltage of -4.5V and a drain current of -4A, which contributes to improved power efficiency. This MOSFET is suitable for various applications, including charging switches for portable devices, DC-to-DC converters, and power management in battery-operated equipment. The exposed drain pad enhances thermal conduction, making it effective for managing heat dissipation. The product is RoHS compliant, ensuring it meets environmental standards.