N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 surface-mounted plastic package using Trench MOSFET technology, with a 20 V drain-source voltage rating, a continuous drain current of 7.3 A at 4.5 V gate-source bias and 25 °C ambient, and a drain-source on-state resistance of 13 to 17 mΩ. The device has an extended junction temperature range up to 175 °C, ESD protection exceeding 2 kV HBM, and is AEC-Q101 qualified. The SOT23 package measures 2.9 mm by 1.3 mm by 1 mm with a 1.9 mm pin pitch.
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Features and benefits
Applications
N-Channel 20V 7.3A (Ta) 610mW (Ta), 8.3W (Tc) Surface Mount TO-236AB
N-Channel 20V 7.3A (Ta) 610mW (Ta), 8.3W (Tc) Surface Mount TO-236AB
N-Channel 20V 7.3A (Ta) 610mW (Ta), 8.3W (Tc) Surface Mount TO-236AB
PMV13XNEA - 20 V, N-CHANNEL TREN
MOSFET, N CHANNEL, 20V, 7.3A, SOT23 ROHS COMPLIANT: YES
| Nexperia B.V. | DigiKey | Acme Chip Technology Co., Limited | Newark, An Avnet Company | |
|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | PMV13XNEAR | 1727-PMV13XNEARDKR-ND | PMV13XNEAR | 38AJ4219 |
| Product Name | 20 V, N-channel Trench MOSFET | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, N Channel, 20V, 7.3A, Sot23 Rohs Compliant Nexperia |
| MOSFET Operating Mode | Enhancement | |||
| V(BR)DSS | 20 volts | |||
| IDSS | 7300 milliamps | |||
| VGS(off) | 12 volts | |||
| PD | 610 milliwatts |
