Infineon Technologies AG Datasheets for RF Transistors
RF transistors are designed to handle high-power radio frequency (RF) signals in devices such as stereo amplifiers, radio transmitters, and television monitors.
RF Transistors: Learn more
| Product Name | Notes |
|---|---|
| Active Bias Controller for various applications like cellular and cordless phones, DECT, WLAN, PHS and RF modems. The controllers are stabilizing the bias current for NPN transistors and FET’s Summary... | |
| High Linearity Low Noise Si NPN RF Transistor Summary of Features Highly linear low noise driver amplifier for all RF frontends up to 2.5 GHz Output compression point OP1dB =... | |
| High Linearity Low Noise SiGe:C NPN RF Transistor Summary of Features Highly linear low noise driver amplifier for all RF frontends up to 4.5 GHz Output compression point OP1dB =... | |
| High Performance NPN Bipolar RF Transistor Summary of Features High performance low noise amplifier Low minimum noise figure of typ. 0.8 dB @ 1.8 GHz For a wide range of... | |
| HiRel Microwave Transistor Summary of Features Hermetically sealed microwave package fT= 8 GHz F = 2.2 dB at 2 GHz Potential Applications For low noise, high-gain broadband amplifiers at collector... | |
| HiRel Microwave Transistor Summary of Features Hermetically sealed microwave package fT= 8 GHz F = 2.2 dB at 2 GHz Type Variant No. 03 ESA Space Qualified ESSCC Detail Spec. | |
| HiRel Microwave Transistor Summary of Features HiRel Discrete and Microwave Semiconductor For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA. Hermetically sealed microwave package... | |
| Low Noise Silicon Bipolar RF Transistor Summary of Features Low noise high gain silicon bipolar RF transistor Based on Infineon´s reliable very high volume 25 GHz silicon bipolar technology 0.9... | |
| NPN Silicon AF Transistors Summary of Features High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types: BCW61, BCX71 (PNP) Pb-free (RoHS compliant)... | |
| NPN Silicon Germanium RF Transistor Summary of Features For medium power amplifiers and driver stages High OIP3 and P-1dB Ideal for low phase noise oscilators Maxim. available Gain Gma =... | |
| NPN silicon planar epitaxial transistor in 4-pin dual-emitter SOT343 package for low noise and low distortion wideband amplifiers. This RF transistor benefits from Infineon long-term experience in RF components and... | |
| NPN Silicon RF Transistor for low current applications Summary of Features For oscillators up to 12 GHz Noise figure F = 1.25 dB at 1.8 GHz outstanding Gms = 23... | |
| NPN Silicon RF Transistor for low current applications Summary of Features Low current device suitable e.g. for handhelds For high frequency oscillators e.g. DRO for LNB For ISM band applications... | |
| NPN Silicon RF Transistor for low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12 mA Summary of Features For low noise, high-gain broadband amplifiers at collector... | |
| NPN Silicon RF Transistor for low noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA Summary of Features For low noise, high-gain broadband amplifiers at collector... | |
| NPN Silicon RF Transistor for low voltage / low current applications Summary of Features Ideal for VCO modules and low noise amplifiers Low noise figure: 1.1 dB at 1.8 GHz... | |
| NPN Silicon RF Transistor Summary of Features For low distortion amplifiers and oscillators up to 2 GHz at collector currents from 5 mA to 30 mA Pb-free (RoHS compliant) package... | |
| NPN Silicon RF Transistor Summary of Features For low noise, high-gain amplifiers up to 2 GHz For linear broadband amplifiers fT = 8 GHz, NFmin = 1 dB at 900... | |
| NPN Silicon RF Transistor Summary of Features For low noise, low distortion broadband amplifiers in antenna and telecommunications systems up to 1.5 GHz at collector currents from 10 mA to... | |
| NPN Silicon RF Transistor Summary of Features For low noise, low distortion broadband amplifiers in antenna and telecommunications systems up to 1.5 GHz at collector currents from 20 mA to... | |
| NPN Silicon RF Transistor Summary of Features For low-noise, high gain broadband amplifiers at collector currents from 2 mA to 30 mA Pb-free (RoHS compliant) package Potential Applications Wireless Communications... | |
| NPN Silicon RF Transistor Summary of Features General purpose low noise amplifier for low voltage, low current applications High ESD robustness, typical 1500V (HBM) Low minimum noise figure 1.1 dB... | |
| NPN Silicon RF Transistor Summary of Features General purpose Low Noise Amplifier Ideal for low current operation High breakdown voltage enables operation in automotive applications Minimum noise figure 1.0 dB... | |
| NPN Silicon RF Transistor Summary of Features High current capability and low noise figure for wide dynamic range Low voltage operation Ideal for low phase noise oscillators up to 3.5... | |
| NPN Silicon RF Transistor Summary of Features High linearity low noise driver amplifier Output compression point 19.5 dBm @ 1.8 GHz Ideal for oscillators up to 3.5 GHz Low noise... | |
| NPN Silicon RF Transistor Summary of Features High linearity low noise RF transistor 22 dBm OP1dB and 31 dBm OIP3 @ 900 MHz, 8 V, 70 mA For UHF /... | |
| NPN Silicon RF Transistor Summary of Features Low noise amplifier designed for low voltage applications, ideal for 1.2 V or 1.8 V supply voltage. Supports 2.9 V Vcc with enough... | |
| NPN Silicon RF Transistor Summary of Features Low noise amplifier for low current applications Collector design supports 5V supply voltage For oscillators up to 3.5 GHz Low noise figure 1.0... | |
| PNP Silicon Digital Transistor Summary of Features Built in bias resistor (R1= 10 kΩ, R2= 10 kΩ) Pb-free (RoHS compliant) package Qualified according AEC Q101 | |
| The BFP760 is a Silicon Germanium Carbon (SiGe:C) NPN Heterojunction wideband Bipolar RF Transistor (HBT). Summary of Features Low noise figure NFmin = 0.95 dB @ 5.5 GHz, 3 V,... | |
| The BFP843F is a robust low noise broadband pre-matched hetero-junction bipolar transistor (HBT). Summary of Features Unique combination of high end RF performance and robustness: 20 dBm maximum RF input... |
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