Infineon Technologies AG Datasheets for RF Transistors

RF transistors are designed to handle high-power radio frequency (RF) signals in devices such as stereo amplifiers, radio transmitters, and television monitors.
RF Transistors: Learn more

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Product Name Notes
Active Bias Controller for various applications like cellular and cordless phones, DECT, WLAN, PHS and RF modems. The controllers are stabilizing the bias current for NPN transistors and FET’s Summary...
High Linearity Low Noise Si NPN RF Transistor Summary of Features Highly linear low noise driver amplifier for all RF frontends up to 2.5 GHz Output compression point OP1dB =...
High Linearity Low Noise SiGe:C NPN RF Transistor Summary of Features Highly linear low noise driver amplifier for all RF frontends up to 4.5 GHz Output compression point OP1dB =...
High Performance NPN Bipolar RF Transistor Summary of Features High performance low noise amplifier Low minimum noise figure of typ. 0.8 dB @ 1.8 GHz For a wide range of...
HiRel Microwave Transistor Summary of Features Hermetically sealed microwave package fT= 8 GHz F = 2.2 dB at 2 GHz Potential Applications For low noise, high-gain broadband amplifiers at collector...
HiRel Microwave Transistor Summary of Features Hermetically sealed microwave package fT= 8 GHz F = 2.2 dB at 2 GHz Type Variant No. 03 ESA Space Qualified ESSCC Detail Spec.
HiRel Microwave Transistor Summary of Features HiRel Discrete and Microwave Semiconductor For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA. Hermetically sealed microwave package...
Low Noise Silicon Bipolar RF Transistor Summary of Features Low noise high gain silicon bipolar RF transistor Based on Infineon´s reliable very high volume 25 GHz silicon bipolar technology 0.9...
NPN Silicon AF Transistors Summary of Features High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types: BCW61, BCX71 (PNP) Pb-free (RoHS compliant)...
NPN Silicon Germanium RF Transistor Summary of Features For medium power amplifiers and driver stages High OIP3 and P-1dB Ideal for low phase noise oscilators Maxim. available Gain Gma =...
NPN silicon planar epitaxial transistor in 4-pin dual-emitter SOT343 package for low noise and low distortion wideband amplifiers. This RF transistor benefits from Infineon long-term experience in RF components and...
NPN Silicon RF Transistor for low current applications Summary of Features For oscillators up to 12 GHz Noise figure F = 1.25 dB at 1.8 GHz outstanding Gms = 23...
NPN Silicon RF Transistor for low current applications Summary of Features Low current device suitable e.g. for handhelds For high frequency oscillators e.g. DRO for LNB For ISM band applications...
NPN Silicon RF Transistor for low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12 mA Summary of Features For low noise, high-gain broadband amplifiers at collector...
NPN Silicon RF Transistor for low noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA Summary of Features For low noise, high-gain broadband amplifiers at collector...
NPN Silicon RF Transistor for low voltage / low current applications Summary of Features Ideal for VCO modules and low noise amplifiers Low noise figure: 1.1 dB at 1.8 GHz...
NPN Silicon RF Transistor Summary of Features For low distortion amplifiers and oscillators up to 2 GHz at collector currents from 5 mA to 30 mA Pb-free (RoHS compliant) package...
NPN Silicon RF Transistor Summary of Features For low noise, high-gain amplifiers up to 2 GHz For linear broadband amplifiers fT = 8 GHz, NFmin = 1 dB at 900...
NPN Silicon RF Transistor Summary of Features For low noise, low distortion broadband amplifiers in antenna and telecommunications systems up to 1.5 GHz at collector currents from 10 mA to...
NPN Silicon RF Transistor Summary of Features For low noise, low distortion broadband amplifiers in antenna and telecommunications systems up to 1.5 GHz at collector currents from 20 mA to...
NPN Silicon RF Transistor Summary of Features For low-noise, high gain broadband amplifiers at collector currents from 2 mA to 30 mA Pb-free (RoHS compliant) package Potential Applications Wireless Communications...
NPN Silicon RF Transistor Summary of Features General purpose low noise amplifier for low voltage, low current applications High ESD robustness, typical 1500V (HBM) Low minimum noise figure 1.1 dB...
NPN Silicon RF Transistor Summary of Features General purpose Low Noise Amplifier Ideal for low current operation High breakdown voltage enables operation in automotive applications Minimum noise figure 1.0 dB...
NPN Silicon RF Transistor Summary of Features High current capability and low noise figure for wide dynamic range Low voltage operation Ideal for low phase noise oscillators up to 3.5...
NPN Silicon RF Transistor Summary of Features High linearity low noise driver amplifier Output compression point 19.5 dBm @ 1.8 GHz Ideal for oscillators up to 3.5 GHz Low noise...
NPN Silicon RF Transistor Summary of Features High linearity low noise RF transistor 22 dBm OP1dB and 31 dBm OIP3 @ 900 MHz, 8 V, 70 mA For UHF /...
NPN Silicon RF Transistor Summary of Features Low noise amplifier designed for low voltage applications, ideal for 1.2 V or 1.8 V supply voltage. Supports 2.9 V Vcc with enough...
NPN Silicon RF Transistor Summary of Features Low noise amplifier for low current applications Collector design supports 5V supply voltage For oscillators up to 3.5 GHz Low noise figure 1.0...
PNP Silicon Digital Transistor Summary of Features Built in bias resistor (R1= 10 kΩ, R2= 10 kΩ) Pb-free (RoHS compliant) package Qualified according AEC Q101
The BFP760 is a Silicon Germanium Carbon (SiGe:C) NPN Heterojunction wideband Bipolar RF Transistor (HBT). Summary of Features Low noise figure NFmin = 0.95 dB @ 5.5 GHz, 3 V,...
The BFP843F is a robust low noise broadband pre-matched hetero-junction bipolar transistor (HBT). Summary of Features Unique combination of high end RF performance and robustness: 20 dBm maximum RF input...

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