Infineon Technologies AG Single Bipolar Transistors BCX5516E6433HTMA1

Description
Bipolar (BJT) Transistor NPN 60V 1A 100MHz 2W Surface Mount PG-SOT89
Request a Quote Datasheet
Description
Bipolar (BJT) Transistor NPN 60V 1A 100MHz 2W Surface Mount PG-SOT89
Request a Quote Datasheet

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Single Bipolar Transistors - BCX5516E6433HTMA1TR-ND - DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
BCX5516E6433HTMA1TR-ND
Single Bipolar Transistors BCX5516E6433HTMA1TR-ND
Bipolar (BJT) Transistor NPN 60V 1A 100MHz 2W Surface Mount PG-SOT89

Bipolar (BJT) Transistor NPN 60V 1A 100MHz 2W Surface Mount PG-SOT89

Buy Now Datasheet
TRANSISTORS - Transistors (BJT) - Single - BCX5516E6433HTMA1 - 1022811-BCX5516E6433HTMA1 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single - BCX5516E6433HTMA1
1022811-BCX5516E6433HTMA1
TRANSISTORS - Transistors (BJT) - Single - BCX5516E6433HTMA1 1022811-BCX5516E6433HTMA1
Manufacturer: Infineon Technologies Win Source Part Number: 1022811-BCX5516E6433 HTMA1 Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 100MHz Transistor Polarity: NPN Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: 150°C (TJ) Case / Package: PG-SOT89 Maximum Current Collector: 1A VCEO Maximum Collector-Emitter Breakdown Voltage: 60V Max Vce (sat): 500mV @ 50mA, 500mA Collector Cut-off Current(Max): 100nA (ICBO) Typical Gain (hFE) (Min): 100 @ 150mA, 2V Maximum Power Dissipation: 2W Popularity: Medium Fake Threat In the Open Market: 30 pct. Supply and Demand Status: Balance

Manufacturer: Infineon Technologies
Win Source Part Number: 1022811-BCX5516E6433HTMA1
Packaging: Reel - TR
Mounting: SMD (SMT)
Frequency - Transition: 100MHz
Transistor Polarity: NPN
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: 150°C (TJ)
Case / Package: PG-SOT89
Maximum Current Collector: 1A
VCEO Maximum Collector-Emitter Breakdown Voltage: 60V
Max Vce (sat): 500mV @ 50mA, 500mA
Collector Cut-off Current(Max): 100nA (ICBO)
Typical Gain (hFE) (Min): 100 @ 150mA, 2V
Maximum Power Dissipation: 2W
Popularity: Medium
Fake Threat In the Open Market: 30 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - BCX5516E6433HTMA1 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
BCX5516E6433HTMA1
Discrete Semiconductor Products - Transistors - Bipolar (BJT) BCX5516E6433HTMA1
TRANS NPN 60V 1A SOT89

TRANS NPN 60V 1A SOT89

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Transistors Bipolar RF Transistors
Product Number BCX5516E6433HTMA1TR-ND 1022811-BCX5516E6433HTMA1 BCX5516E6433HTMA1
Product Name Single Bipolar Transistors TRANSISTORS - Transistors (BJT) - Single - BCX5516E6433HTMA1 Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity NPN NPN; NPN
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