Infineon Technologies AG BF2030-E6327

The BF2030 is a silicon N-channel MOSFET tetrode designed for low-noise, high-gain input stages up to 1 GHz, with a maximum drain-source voltage of 8 V and continuous drain current of 40 mA. It is available in SOT143, SOT143R, and SOT343 packages, with total power dissipation up to 200 mW depending on package and case temperature. The device features a forward transconductance of 27 to 31 mS, gate input capacitance of 2.4 to 2.8 pF, and a noise figure of 1.5 to 2.2 dB at 800 MHz. It is RoHS compliant and qualified to AEC-Q101. ESD sensitivity is rated Class 2 (2000 V to 4000 V) per Human Body Model.