Infineon Technologies AG TRANSISTORS - RF Transistors (BJT) - BFS483H6327XTSA1 BFS483H6327XTSA1

Description
Manufacturer: Infineon Technologies Win Source Part Number: 100573-BFS483H6327XT SA1 Packaging: Reel - TR Mounting: SMD (SMT) Gain: 19dB Frequency - Transition: 8GHz Transistor Polarity: 2 NPN (Dual) Noise Figure (dB Typ @ f): 0.9dB to 1.4dB @ 900MHz to 1.8GHz Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: PG-SOT363-6 Maximum Current Collector: 65mA VCEO Maximum Collector-Emitter Breakdown Voltage: 12V Typical Gain (hFE) (Min): 70 @ 15mA, 8V Maximum Power Dissipation: 450mW Popularity: Medium Fake Threat In the Open Market: 42 pct. Supply and Demand Status: Sufficient
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Description
Manufacturer: Infineon Technologies Win Source Part Number: 100573-BFS483H6327XT SA1 Packaging: Reel - TR Mounting: SMD (SMT) Gain: 19dB Frequency - Transition: 8GHz Transistor Polarity: 2 NPN (Dual) Noise Figure (dB Typ @ f): 0.9dB to 1.4dB @ 900MHz to 1.8GHz Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: PG-SOT363-6 Maximum Current Collector: 65mA VCEO Maximum Collector-Emitter Breakdown Voltage: 12V Typical Gain (hFE) (Min): 70 @ 15mA, 8V Maximum Power Dissipation: 450mW Popularity: Medium Fake Threat In the Open Market: 42 pct. Supply and Demand Status: Sufficient
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Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - RF Transistors (BJT) - BFS483H6327XTSA1 - 100573-BFS483H6327XTSA1 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - RF Transistors (BJT) - BFS483H6327XTSA1
100573-BFS483H6327XTSA1
TRANSISTORS - RF Transistors (BJT) - BFS483H6327XTSA1 100573-BFS483H6327XTSA1
Manufacturer: Infineon Technologies Win Source Part Number: 100573-BFS483H6327XT SA1 Packaging: Reel - TR Mounting: SMD (SMT) Gain: 19dB Frequency - Transition: 8GHz Transistor Polarity: 2 NPN (Dual) Noise Figure (dB Typ @ f): 0.9dB to 1.4dB @ 900MHz to 1.8GHz Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: PG-SOT363-6 Maximum Current Collector: 65mA VCEO Maximum Collector-Emitter Breakdown Voltage: 12V Typical Gain (hFE) (Min): 70 @ 15mA, 8V Maximum Power Dissipation: 450mW Popularity: Medium Fake Threat In the Open Market: 42 pct. Supply and Demand Status: Sufficient

Manufacturer: Infineon Technologies
Win Source Part Number: 100573-BFS483H6327XTSA1
Packaging: Reel - TR
Mounting: SMD (SMT)
Gain: 19dB
Frequency - Transition: 8GHz
Transistor Polarity: 2 NPN (Dual)
Noise Figure (dB Typ @ f): 0.9dB to 1.4dB @ 900MHz to 1.8GHz
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: PG-SOT363-6
Maximum Current Collector: 65mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 12V
Typical Gain (hFE) (Min): 70 @ 15mA, 8V
Maximum Power Dissipation: 450mW
Popularity: Medium
Fake Threat In the Open Market: 42 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
Bipolar Transistors - 2591459 - RS Components, Ltd.
Corby, Northants, United Kingdom
Bipolar Transistors
2591459
Bipolar Transistors 2591459
Infineon RF Bip Transisitor BFS 483 H632

Infineon RF Bip Transisitor BFS 483 H632

Supplier's Site
Bipolar Transistors - 2591460P - RS Components, Ltd.
Corby, Northants, United Kingdom
Bipolar Transistors
2591460P
Bipolar Transistors 2591460P
Infineon RF Bip Transisitor BFS 483 H632

Infineon RF Bip Transisitor BFS 483 H632

Supplier's Site
Bipolar Transistors - 2591460 - RS Components, Ltd.
Corby, Northants, United Kingdom
Bipolar Transistors
2591460
Bipolar Transistors 2591460
Infineon RF Bip Transisitor BFS 483 H632

Infineon RF Bip Transisitor BFS 483 H632

Supplier's Site
Bipolar RF Transistors - BFS483H6327XTSA1CT-ND - DigiKey
Thief River Falls, MN, United States
Bipolar RF Transistors
BFS483H6327XTSA1CT-ND
Bipolar RF Transistors BFS483H6327XTSA1CT-ND
RF Transistor 2 NPN (Dual) 12V 65mA 8GHz 450mW Surface Mount PG-SOT363-6

RF Transistor 2 NPN (Dual) 12V 65mA 8GHz 450mW Surface Mount PG-SOT363-6

Buy Now Datasheet
Bipolar RF Transistors - BFS483H6327XTSA1TR-ND - DigiKey
Thief River Falls, MN, United States
Bipolar RF Transistors
BFS483H6327XTSA1TR-ND
Bipolar RF Transistors BFS483H6327XTSA1TR-ND
RF Transistor 2 NPN (Dual) 12V 65mA 8GHz 450mW Surface Mount PG-SOT363-6

RF Transistor 2 NPN (Dual) 12V 65mA 8GHz 450mW Surface Mount PG-SOT363-6

Buy Now Datasheet
Bipolar RF Transistors - BFS483H6327XTSA1DKR-ND - DigiKey
Thief River Falls, MN, United States
Bipolar RF Transistors
BFS483H6327XTSA1DKR-ND
Bipolar RF Transistors BFS483H6327XTSA1DKR-ND
RF Transistor 2 NPN (Dual) 12V 65mA 8GHz 450mW Surface Mount PG-SOT363-6

RF Transistor 2 NPN (Dual) 12V 65mA 8GHz 450mW Surface Mount PG-SOT363-6

Buy Now Datasheet
Singapore
12V 8GHZ Bipolar Transistor
283-BFS483H6327XTSA1
12V 8GHZ Bipolar Transistor 283-BFS483H6327XTSA1
RF TRANS 2 NPN 12V 8GHZ SOT363-6 Product overview: BFS483H6327XTSA1 from Infineon Technologies is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 12V, 8GHZ. Search-friendly keywords include transistor, BJT, switching, amplification, 12V, 8GHZ, Bipolar Transistor, Bipolar RF Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 283-BFS483H6327XTSA1 can be used for catalog matching and distributor lookup.

RF TRANS 2 NPN 12V 8GHZ SOT363-6 Product overview: BFS483H6327XTSA1 from Infineon Technologies is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 12V, 8GHZ. Search-friendly keywords include transistor, BJT, switching, amplification, 12V, 8GHZ, Bipolar Transistor, Bipolar RF Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 283-BFS483H6327XTSA1 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Bipolar RF Transistors - BFS483H6327XTSA1 - ODG (Origin Data Global)
Shenzhen, China
Bipolar RF Transistors
BFS483H6327XTSA1
Bipolar RF Transistors BFS483H6327XTSA1
RF TRANS 2 NPN 12V 8GHZ SOT363-6

RF TRANS 2 NPN 12V 8GHZ SOT363-6

Supplier's Site Datasheet
Sheung Wan, Hong Kong
RF Bipolar Transistors
BFS483H6327XTSA1
RF Bipolar Transistors BFS483H6327XTSA1
RF Bipolar Transistors RF BIP TRANSISTOR

RF Bipolar Transistors RF BIP TRANSISTOR

Buy Now Datasheet
Trans GP BJT NPN 12V 0.065A 6-Pin SOT-363 T/R - 376-BFS483H6327XTSA1 - Utmel Electronic Limited
Hong Kong, China
Trans GP BJT NPN 12V 0.065A 6-Pin SOT-363 T/R
376-BFS483H6327XTSA1
Trans GP BJT NPN 12V 0.065A 6-Pin SOT-363 T/R 376-BFS483H6327XTSA1
Trans GP BJT NPN 12V 0.065A 6-Pin SOT-363 T/R

Trans GP BJT NPN 12V 0.065A 6-Pin SOT-363 T/R

Supplier's Site
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - BFS483H6327XTSA1 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
BFS483H6327XTSA1
Discrete Semiconductor Products - Transistors - Bipolar (BJT) BFS483H6327XTSA1
RF TRANS 2 NPN 12V 8GHZ SOT363-6

RF TRANS 2 NPN 12V 8GHZ SOT363-6

Supplier's Site
Bipolar Rf Transistor, Dual Npn, 12 V, 8 Ghz, 450 Mw, 65 Ma, 70 Rohs Compliant Infineon - 50Y1774 - Newark, An Avnet Company
Chicago, IL, United States
Bipolar Rf Transistor, Dual Npn, 12 V, 8 Ghz, 450 Mw, 65 Ma, 70 Rohs Compliant Infineon
50Y1774
Bipolar Rf Transistor, Dual Npn, 12 V, 8 Ghz, 450 Mw, 65 Ma, 70 Rohs Compliant Infineon 50Y1774
Bipolar - RF Transistor, Dual NPN, 12 V, 8 GHz, 450 mW, 65 mA, 70 RoHS Compliant: Yes

Bipolar - RF Transistor, Dual NPN, 12 V, 8 GHz, 450 mW, 65 mA, 70 RoHS Compliant: Yes

Supplier's Site Datasheet

Technical Specifications

  Win Source Electronics RS Components, Ltd. DigiKey ERSAELECTRONICS PTE. LTD. ODG (Origin Data Global) VAST STOCK CO., LIMITED Utmel Electronic Limited Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company
Product Category Transistors Bipolar RF Transistors Transistors Bipolar RF Transistors Bipolar RF Transistors Bipolar RF Transistors Bipolar RF Transistors Bipolar RF Transistors Bipolar RF Transistors
Product Number 100573-BFS483H6327XTSA1 2591459 BFS483H6327XTSA1CT-ND 283-BFS483H6327XTSA1 BFS483H6327XTSA1 BFS483H6327XTSA1 376-BFS483H6327XTSA1 BFS483H6327XTSA1 50Y1774
Product Name TRANSISTORS - RF Transistors (BJT) - BFS483H6327XTSA1 Bipolar Transistors Bipolar RF Transistors 12V 8GHZ Bipolar Transistor Bipolar RF Transistors RF Bipolar Transistors Trans GP BJT NPN 12V 0.065A 6-Pin SOT-363 T/R Discrete Semiconductor Products - Transistors - Bipolar (BJT) Bipolar Rf Transistor, Dual Npn, 12 V, 8 Ghz, 450 Mw, 65 Ma, 70 Rohs Compliant Infineon
Polarity NPN; 2 NPN (Dual) NPN 2 NPN (Dual); NPN NPN; NPN NPN
Package Type SOT3; PG-SOT363-6 SOT-363 6-VSSOP, SC-88, SOT-363 Tape & Reel (TR) 6-VSSOP, SC-88, SOT-363 TO-3
Packing Method Tape & Reel (TR) Tape Reel; Tape & Reel (TR) Tape Reel; Tape & Reel (TR),Cut Tape (CT),Digi-ReelR
IC(max) 65 milliamps 65 milliamps 65 milliamps
VCEO 12 volts 12 volts 12 volts 12 volts
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