Infineon Technologies AG TRANSISTORS - RF Transistors (BJT) - BFR 183T E6327 BFR 183T E6327

Description
Manufacturer: Infineon Technologies Win Source Part Number: 1023252-BFR 183T E6327 Packaging: Reel - TR Mounting: SMD (SMT) Gain: 19.5dB Frequency - Transition: 8GHz Transistor Polarity: NPN Noise Figure (dB Typ @ f): 1.2dB to 2dB @ 900MHz to 1.8GHz Categories: Discrete Semiconductor Products Temperature Range - Operating: 150°C (TJ) Case / Package: PG-SC-75 Maximum Current Collector: 65mA VCEO Maximum Collector-Emitter Breakdown Voltage: 12V Typical Gain (hFE) (Min): 50 @ 15mA, 8V Maximum Power Dissipation: 250mW Popularity: Medium Fake Threat In the Open Market: 56 pct. Supply and Demand Status: Sufficient
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Description
Manufacturer: Infineon Technologies Win Source Part Number: 1023252-BFR 183T E6327 Packaging: Reel - TR Mounting: SMD (SMT) Gain: 19.5dB Frequency - Transition: 8GHz Transistor Polarity: NPN Noise Figure (dB Typ @ f): 1.2dB to 2dB @ 900MHz to 1.8GHz Categories: Discrete Semiconductor Products Temperature Range - Operating: 150°C (TJ) Case / Package: PG-SC-75 Maximum Current Collector: 65mA VCEO Maximum Collector-Emitter Breakdown Voltage: 12V Typical Gain (hFE) (Min): 50 @ 15mA, 8V Maximum Power Dissipation: 250mW Popularity: Medium Fake Threat In the Open Market: 56 pct. Supply and Demand Status: Sufficient
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Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - RF Transistors (BJT) - BFR 183T E6327 - 1023252-BFR 183T E6327 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - RF Transistors (BJT) - BFR 183T E6327
1023252-BFR 183T E6327
TRANSISTORS - RF Transistors (BJT) - BFR 183T E6327 1023252-BFR 183T E6327
Manufacturer: Infineon Technologies Win Source Part Number: 1023252-BFR 183T E6327 Packaging: Reel - TR Mounting: SMD (SMT) Gain: 19.5dB Frequency - Transition: 8GHz Transistor Polarity: NPN Noise Figure (dB Typ @ f): 1.2dB to 2dB @ 900MHz to 1.8GHz Categories: Discrete Semiconductor Products Temperature Range - Operating: 150°C (TJ) Case / Package: PG-SC-75 Maximum Current Collector: 65mA VCEO Maximum Collector-Emitter Breakdown Voltage: 12V Typical Gain (hFE) (Min): 50 @ 15mA, 8V Maximum Power Dissipation: 250mW Popularity: Medium Fake Threat In the Open Market: 56 pct. Supply and Demand Status: Sufficient

Manufacturer: Infineon Technologies
Win Source Part Number: 1023252-BFR 183T E6327
Packaging: Reel - TR
Mounting: SMD (SMT)
Gain: 19.5dB
Frequency - Transition: 8GHz
Transistor Polarity: NPN
Noise Figure (dB Typ @ f): 1.2dB to 2dB @ 900MHz to 1.8GHz
Categories: Discrete Semiconductor Products
Temperature Range - Operating: 150°C (TJ)
Case / Package: PG-SC-75
Maximum Current Collector: 65mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 12V
Typical Gain (hFE) (Min): 50 @ 15mA, 8V
Maximum Power Dissipation: 250mW
Popularity: Medium
Fake Threat In the Open Market: 56 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
Singapore
12V 8GHZ Bipolar Transistor
283-BFR 183T E6327
12V 8GHZ Bipolar Transistor 283-BFR 183T E6327
RF TRANS NPN 12V 8GHZ SC75 Product overview: BFR 183T E6327 from Infineon Technologies is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 12V, 8GHZ. Search-friendly keywords include transistor, BJT, switching, amplification, 12V, 8GHZ, Bipolar Transistor, Bipolar RF Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 283-BFR 183T E6327 can be used for catalog matching and distributor lookup.

RF TRANS NPN 12V 8GHZ SC75 Product overview: BFR 183T E6327 from Infineon Technologies is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 12V, 8GHZ. Search-friendly keywords include transistor, BJT, switching, amplification, 12V, 8GHZ, Bipolar Transistor, Bipolar RF Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 283-BFR 183T E6327 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Bipolar RF Transistors - BFR183TE6327-ND - DigiKey
Thief River Falls, MN, United States
Bipolar RF Transistors
BFR183TE6327-ND
Bipolar RF Transistors BFR183TE6327-ND
RF Transistor NPN 12V 65mA 8GHz 250mW Surface Mount PG-SC-75

RF Transistor NPN 12V 65mA 8GHz 250mW Surface Mount PG-SC-75

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Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD. DigiKey
Product Category RF Transistors Bipolar RF Transistors Transistors
Product Number 1023252-BFR 183T E6327 283-BFR 183T E6327 BFR183TE6327-ND
Product Name TRANSISTORS - RF Transistors (BJT) - BFR 183T E6327 12V 8GHZ Bipolar Transistor Bipolar RF Transistors
Polarity NPN; NPN NPN
Package Type SOT3; PG-SC-75 Tape & Reel (TR) SC-75, SOT-416
Packing Method Tape Reel; Reel - TR Tape & Reel (TR)
TJ 150 C (302 F) 150 C (302 F)
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