Infineon Technologies AG Low Noise RF Transistors BFP520

Description
NPN Silicon RF Transistor Summary of Features Low noise amplifier designed for low voltage applications, ideal for 1.2 V or 1.8 V supply voltage. Supports 2.9 V Vcc with enough external collector resistance. High gain and low noise at high frequencies due to high transit frequency fT = 45 GHz Finds usage e.g. in cordless phones and satellite receivers Pb-free (RoHS compliant) standard package with visible leads Potential Applications Wireless Communications For amplifier and oscillator applications in RF Front-end
  • Low Noise RF Transistors - BFP520 - Infineon Technologies AG
    Infineon Technologies AG
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Description
NPN Silicon RF Transistor Summary of Features Low noise amplifier designed for low voltage applications, ideal for 1.2 V or 1.8 V supply voltage. Supports 2.9 V Vcc with enough external collector resistance. High gain and low noise at high frequencies due to high transit frequency fT = 45 GHz Finds usage e.g. in cordless phones and satellite receivers Pb-free (RoHS compliant) standard package with visible leads Potential Applications Wireless Communications For amplifier and oscillator applications in RF Front-end
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Datasheet
Datasheet Summary
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The BFP520 is a surface mount silicon NPN RF bipolar transistor designed for low voltage, high-frequency applications such as low noise amplifiers and RF oscillators. It is packaged in a SOT343 case with pin configuration 1=B, 2=E, 3=C, 4=E and measures 2.1 mm x 1.0 mm. The device has a transition frequency of 45 GHz, a minimum noise figure of 0.95 dB at 1.8 GHz and 2 mA collector current, and a power gain of 24 dB at 1.8 GHz and 20 mA collector current. Its collector-emitter voltage rating is 2.5 V, and it dissipates up to 125 mW at 105 °C with a junction temperature limit of 150 °C. The transistor is qualified for industrial applications according to JEDEC JESD47/20/22 and is RoHS compliant.

Datasheet Summary
Powered by GS/AI

The BFP520 is a surface mount silicon NPN RF bipolar transistor designed for low voltage, high-frequency applications such as low noise amplifiers and RF oscillators. It is packaged in a SOT343 case with pin configuration 1=B, 2=E, 3=C, 4=E and measures 2.1 mm x 1.0 mm. The device has a transition frequency of 45 GHz, a minimum noise figure of 0.95 dB at 1.8 GHz and 2 mA collector current, and a power gain of 24 dB at 1.8 GHz and 20 mA collector current. Its collector-emitter voltage rating is 2.5 V, and it dissipates up to 125 mW at 105 °C with a junction temperature limit of 150 °C. The transistor is qualified for industrial applications according to JEDEC JESD47/20/22 and is RoHS compliant.

Suppliers

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Supplier Links
Low Noise RF Transistors - BFP520 - Infineon Technologies AG
Infineon Technologies AG
Neubiberg, Germany
Low Noise RF Transistors
BFP520
Low Noise RF Transistors BFP520
NPN Silicon RF Transistor Summary of Features Low noise amplifier designed for low voltage applications, ideal for 1.2 V or 1.8 V supply voltage. Supports 2.9 V Vcc with enough external collector resistance. High gain and low noise at high frequencies due to high transit frequency fT = 45 GHz Finds usage e.g. in cordless phones and satellite receivers Pb-free (RoHS compliant) standard package with visible leads Potential Applications Wireless Communications For amplifier and oscillator applications in RF Front-end

NPN Silicon RF Transistor


Summary of Features

  • Low noise amplifier designed for low voltage applications, ideal for 1.2 V or 1.8 V supply voltage. Supports 2.9 V Vcc with enough external collector resistance.
  • High gain and low noise at high frequencies due to high transit frequency fT = 45 GHz
  • Finds usage e.g. in cordless phones and satellite receivers
  • Pb-free (RoHS compliant) standard package with visible leads

Potential Applications

  • Wireless Communications
  • For amplifier and oscillator applications in RF Front-end
Supplier's Site Datasheet

Technical Specifications

  Infineon Technologies AG
Product Category RF Transistors
Product Number BFP520
Product Name Low Noise RF Transistors
Package Type SOT343
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