Infineon Technologies AG Low Noise RF Transistors BFP520

Description
NPN Silicon RF Transistor Summary of Features Low noise amplifier designed for low voltage applications, ideal for 1.2 V or 1.8 V supply voltage. Supports 2.9 V Vcc with enough external collector resistance. High gain and low noise at high frequencies due to high transit frequency fT = 45 GHz Finds usage e.g. in cordless phones and satellite receivers Pb-free (RoHS compliant) standard package with visible leads Potential Applications Wireless Communications For amplifier and oscillator applications in RF Front-end
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Description
NPN Silicon RF Transistor Summary of Features Low noise amplifier designed for low voltage applications, ideal for 1.2 V or 1.8 V supply voltage. Supports 2.9 V Vcc with enough external collector resistance. High gain and low noise at high frequencies due to high transit frequency fT = 45 GHz Finds usage e.g. in cordless phones and satellite receivers Pb-free (RoHS compliant) standard package with visible leads Potential Applications Wireless Communications For amplifier and oscillator applications in RF Front-end
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Low Noise RF Transistors - BFP520 - Infineon Technologies AG
Neubiberg, Germany
Low Noise RF Transistors
BFP520
Low Noise RF Transistors BFP520
NPN Silicon RF Transistor Summary of Features Low noise amplifier designed for low voltage applications, ideal for 1.2 V or 1.8 V supply voltage. Supports 2.9 V Vcc with enough external collector resistance. High gain and low noise at high frequencies due to high transit frequency fT = 45 GHz Finds usage e.g. in cordless phones and satellite receivers Pb-free (RoHS compliant) standard package with visible leads Potential Applications Wireless Communications For amplifier and oscillator applications in RF Front-end

NPN Silicon RF Transistor


Summary of Features

  • Low noise amplifier designed for low voltage applications, ideal for 1.2 V or 1.8 V supply voltage. Supports 2.9 V Vcc with enough external collector resistance.
  • High gain and low noise at high frequencies due to high transit frequency fT = 45 GHz
  • Finds usage e.g. in cordless phones and satellite receivers
  • Pb-free (RoHS compliant) standard package with visible leads

Potential Applications

  • Wireless Communications
  • For amplifier and oscillator applications in RF Front-end
Supplier's Site Datasheet

Technical Specifications

  Infineon Technologies AG
Product Category RF Transistors
Product Number BFP520
Product Name Low Noise RF Transistors
Package Type SOT343
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