Infineon Technologies AG 12V Bipolar Transistor BFG193 E6433

Description
TRANSISTOR RF NPN 12V SOT-223 Product overview: BFG193 E6433 from Infineon Technologies is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 12V. Search-friendly keywords include transistor, BJT, switching, amplification, 12V, Bipolar Transistor, Bipolar RF Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 283-BFG193 E6433 can be used for catalog matching and distributor lookup.
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Description
TRANSISTOR RF NPN 12V SOT-223 Product overview: BFG193 E6433 from Infineon Technologies is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 12V. Search-friendly keywords include transistor, BJT, switching, amplification, 12V, Bipolar Transistor, Bipolar RF Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 283-BFG193 E6433 can be used for catalog matching and distributor lookup.
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Suppliers

Company
Product
Description
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Singapore, Singapore
12V Bipolar Transistor
283-BFG193 E6433
12V Bipolar Transistor 283-BFG193 E6433
TRANSISTOR RF NPN 12V SOT-223 Product overview: BFG193 E6433 from Infineon Technologies is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 12V. Search-friendly keywords include transistor, BJT, switching, amplification, 12V, Bipolar Transistor, Bipolar RF Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 283-BFG193 E6433 can be used for catalog matching and distributor lookup.

TRANSISTOR RF NPN 12V SOT-223 Product overview: BFG193 E6433 from Infineon Technologies is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 12V. Search-friendly keywords include transistor, BJT, switching, amplification, 12V, Bipolar Transistor, Bipolar RF Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 283-BFG193 E6433 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
TRANSISTORS - RF Transistors (BJT) - BFG193 E6433 - 201147-BFG193 E6433 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - RF Transistors (BJT) - BFG193 E6433
201147-BFG193 E6433
TRANSISTORS - RF Transistors (BJT) - BFG193 E6433 201147-BFG193 E6433
Manufacturer: Infineon Technologies Win Source Part Number: 201147-BFG193 E6433 Packaging: Reel - TR Mounting: SMD (SMT) Gain: 10.5dB to 16dB Frequency - Transition: 8GHz Transistor Polarity: NPN Noise Figure (dB Typ @ f): 1dB to 1.6dB @ 900MHz to 1.8GHz Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: 150°C (TJ) Case / Package: PG-SOT223-4 Maximum Current Collector: 80mA VCEO Maximum Collector-Emitter Breakdown Voltage: 12V Typical Gain (hFE) (Min): 70 @ 30mA, 8V Maximum Power Dissipation: 600mW Alternative Parts (Cross-Reference): BLT50; BFG193; BFG196E6327; BFG 193 E6433; Popularity: Medium Fake Threat In the Open Market: 33 pct. Supply and Demand Status: Balance

Manufacturer: Infineon Technologies
Win Source Part Number: 201147-BFG193 E6433
Packaging: Reel - TR
Mounting: SMD (SMT)
Gain: 10.5dB to 16dB
Frequency - Transition: 8GHz
Transistor Polarity: NPN
Noise Figure (dB Typ @ f): 1dB to 1.6dB @ 900MHz to 1.8GHz
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: 150°C (TJ)
Case / Package: PG-SOT223-4
Maximum Current Collector: 80mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 12V
Typical Gain (hFE) (Min): 70 @ 30mA, 8V
Maximum Power Dissipation: 600mW
Alternative Parts (Cross-Reference): BLT50; BFG193; BFG196E6327; BFG 193 E6433;
Popularity: Medium
Fake Threat In the Open Market: 33 pct.
Supply and Demand Status: Balance

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Technical Specifications

  ERSAELECTRONICS PTE. LTD. Win Source Electronics
Product Category Bipolar RF Transistors RF Transistors
Product Number 283-BFG193 E6433 201147-BFG193 E6433
Product Name 12V Bipolar Transistor TRANSISTORS - RF Transistors (BJT) - BFG193 E6433
Polarity NPN NPN; NPN
Package Type Reel - TR SOT3; PG-SOT223-4
Packing Method Reel - TR Tape Reel; Reel - TR
Noise Figure 1 dB 1 dB
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