Infineon Technologies AG TRANSISTORS - RF Transistors (BJT) - BFG193 E6433 BFG193 E6433

Manufacturer: Infineon Technologies
Win Source Part Number: 201147-BFG193 E6433
Packaging: Reel - TR
Mounting: SMD (SMT)
Gain: 10.5dB to 16dB
Frequency - Transition: 8GHz
Transistor Polarity: NPN
Noise Figure (dB Typ @ f): 1dB to 1.6dB @ 900MHz to 1.8GHz
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: 150°C (TJ)
Case / Package: PG-SOT223-4
Maximum Current Collector: 80mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 12V
Typical Gain (hFE) (Min): 70 @ 30mA, 8V
Maximum Power Dissipation: 600mW
Alternative Parts (Cross-Reference): BLT50; BFG193; BFG196E6327; BFG 193 E6433;
Popularity: Medium
Fake Threat In the Open Market: 33 pct.
Supply and Demand Status: Balance

TRANSISTOR RF NPN 12V SOT-223 Product overview: BFG193 E6433 from Infineon Technologies is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 12V. Search-friendly keywords include transistor, BJT, switching, amplification, 12V, Bipolar Transistor, Bipolar RF Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 283-BFG193 E6433 can be used for catalog matching and distributor lookup.