BFR193 is a silicon NPN RF transistor designed for low-noise, high-gain amplifiers up to 2 GHz and linear broadband applications. It is housed in an SOT23 package and meets RoHS compliance. The device has a maximum collector-emitter voltage of 12 V, a collector current of 80 mA, and a total power dissipation of 580 mW at a case temperature of 69°C. It offers a transition frequency of up to 8 GHz, a minimum noise figure of 1 dB at 900 MHz, and a maximum collector-base capacitance of 1 pF. Qualification data is available according to AEC-Q101. The junction temperature ranges from -55°C to 150°C.
NPN Silicon RF Transistor
Summary of Features
Potential Applications
RF Transistor NPN 12V Low Noise SOT23
| Infineon Technologies AG | RS Components, Ltd. | |
|---|---|---|
| Product Category | RF Transistors | Bipolar RF Transistors |
| Product Number | BFR193 | 8235538 |
| Product Name | High Linearity RF Transistors | Bipolar Transistors |
| Package Type | SOT23; SOT23 | SOT23; Sot-23 |
