Infineon Technologies AG TRANSISTORS - RF Transistors (BJT) - BFG19S BFG19S

Manufacturer: Infineon Technologies
Win Source Part Number: 201152-BFG19S
Packaging: Reel - TR
Mounting: SMD (SMT)
Gain: 14dB to 8.5dB
Frequency - Transition: 5.5GHz
Transistor Polarity: NPN
Noise Figure (dB Typ @ f): 2dB to 3dB @ 900MHz to 1.8GHz
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: 150°C (TJ)
Case / Package: PG-SOT223-4
Maximum Current Collector: 210mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 15V
Typical Gain (hFE) (Min): 70 @ 70mA, 8V
Maximum Power Dissipation: 1W
Alternative Parts (Cross-Reference): BFG541; BFG19SE6327; BFG235E6327;
Popularity: Medium
Fake Threat In the Open Market: 49 pct.
Supply and Demand Status: Balance

TRANSISTOR RF NPN 15V SOT-223 Product overview: BFG19S from Infineon Technologies is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 15V. Search-friendly keywords include transistor, BJT, switching, amplification, 15V, Bipolar Transistor, Bipolar RF Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 283-BFG19S can be used for catalog matching and distributor lookup.