Infineon Technologies AG 15V Bipolar Transistor BFG19S

Description
TRANSISTOR RF NPN 15V SOT-223 Product overview: BFG19S from Infineon Technologies is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 15V. Search-friendly keywords include transistor, BJT, switching, amplification, 15V, Bipolar Transistor, Bipolar RF Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 283-BFG19S can be used for catalog matching and distributor lookup.
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Description
TRANSISTOR RF NPN 15V SOT-223 Product overview: BFG19S from Infineon Technologies is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 15V. Search-friendly keywords include transistor, BJT, switching, amplification, 15V, Bipolar Transistor, Bipolar RF Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 283-BFG19S can be used for catalog matching and distributor lookup.
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Suppliers

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Product
Description
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Singapore
15V Bipolar Transistor
283-BFG19S
15V Bipolar Transistor 283-BFG19S
TRANSISTOR RF NPN 15V SOT-223 Product overview: BFG19S from Infineon Technologies is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 15V. Search-friendly keywords include transistor, BJT, switching, amplification, 15V, Bipolar Transistor, Bipolar RF Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 283-BFG19S can be used for catalog matching and distributor lookup.

TRANSISTOR RF NPN 15V SOT-223 Product overview: BFG19S from Infineon Technologies is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 15V. Search-friendly keywords include transistor, BJT, switching, amplification, 15V, Bipolar Transistor, Bipolar RF Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 283-BFG19S can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
TRANSISTORS - RF Transistors (BJT) - BFG19S - 201152-BFG19S - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - RF Transistors (BJT) - BFG19S
201152-BFG19S
TRANSISTORS - RF Transistors (BJT) - BFG19S 201152-BFG19S
Manufacturer: Infineon Technologies Win Source Part Number: 201152-BFG19S Packaging: Reel - TR Mounting: SMD (SMT) Gain: 14dB to 8.5dB Frequency - Transition: 5.5GHz Transistor Polarity: NPN Noise Figure (dB Typ @ f): 2dB to 3dB @ 900MHz to 1.8GHz Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: 150°C (TJ) Case / Package: PG-SOT223-4 Maximum Current Collector: 210mA VCEO Maximum Collector-Emitter Breakdown Voltage: 15V Typical Gain (hFE) (Min): 70 @ 70mA, 8V Maximum Power Dissipation: 1W Alternative Parts (Cross-Reference): BFG541; BFG19SE6327; BFG235E6327; Popularity: Medium Fake Threat In the Open Market: 49 pct. Supply and Demand Status: Balance

Manufacturer: Infineon Technologies
Win Source Part Number: 201152-BFG19S
Packaging: Reel - TR
Mounting: SMD (SMT)
Gain: 14dB to 8.5dB
Frequency - Transition: 5.5GHz
Transistor Polarity: NPN
Noise Figure (dB Typ @ f): 2dB to 3dB @ 900MHz to 1.8GHz
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: 150°C (TJ)
Case / Package: PG-SOT223-4
Maximum Current Collector: 210mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 15V
Typical Gain (hFE) (Min): 70 @ 70mA, 8V
Maximum Power Dissipation: 1W
Alternative Parts (Cross-Reference): BFG541; BFG19SE6327; BFG235E6327;
Popularity: Medium
Fake Threat In the Open Market: 49 pct.
Supply and Demand Status: Balance

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Technical Specifications

  ERSAELECTRONICS PTE. LTD. Win Source Electronics
Product Category Bipolar RF Transistors RF Transistors
Product Number 283-BFG19S 201152-BFG19S
Product Name 15V Bipolar Transistor TRANSISTORS - RF Transistors (BJT) - BFG19S
Polarity NPN NPN; NPN
Package Type Reel - TR SOT3; PG-SOT223-4
Packing Method Reel - TR Tape Reel; Reel - TR
Noise Figure 2 dB 2 dB
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