Infineon Technologies AG Bipolar RF Transistors BFR360L3E6765

Description
LOW-NOISE SI TRANSISTOR
  • Bipolar RF Transistors - BFR360L3E6765 - ODG (Origin Data Global)
    ODG (Origin Data Global)
Datasheet
Description
LOW-NOISE SI TRANSISTOR
Datasheet

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Bipolar RF Transistors - BFR360L3E6765 - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Bipolar RF Transistors
BFR360L3E6765
Bipolar RF Transistors BFR360L3E6765
LOW-NOISE SI TRANSISTOR

LOW-NOISE SI TRANSISTOR

Supplier's Site Datasheet

Technical Specifications

  ODG (Origin Data Global)
Product Category Bipolar RF Transistors
Product Number BFR360L3E6765
Product Name Bipolar RF Transistors
Polarity NPN; NPN
Package Type SC-101, SOT-883
IC(max) 35 milliamps
VCEO 9 volts
Power Gain 11.5 dB
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