NPN silicon planar epitaxial transistor in 4-pin dual-emitter SOT343 package for low noise and low distortion wideband amplifiers. This RF transistor benefits from Infineon long-term experience in RF components and combines ease-of-use to stable volumes production, at benchmark quality and reliability.
Summary of Features
For high voltage applications VCE < 12 V
Maximal power Ptot = 700 mW
Transition frequency fT = 7.5 GHz
Noise figure NFmin = 1.3 dB at 900 MHz
Easy to use Pb-free (RoHS compliant) and halogen-free industry
Standard SOT343 package with visible leads
Potential Applications
GNSS active antenna
Amplifiers in antenna and telecommunications systems
CATV
Power amplifier for DECT and PCN systems
NPN silicon planar epitaxial transistor in 4-pin dual-emitter SOT343 package for low noise and low distortion wideband amplifiers. This RF transistor benefits from Infineon long-term experience in RF components and combines ease-of-use to stable volumes production, at benchmark quality and reliability.
Summary of Features
- For high voltage applications VCE < 12 V
- Maximal power Ptot = 700 mW
- Transition frequency fT = 7.5 GHz
- Noise figure NFmin = 1.3 dB at 900 MHz
- Easy to use Pb-free (RoHS compliant) and halogen-free industry
- Standard SOT343 package with visible leads
Potential Applications
- GNSS active antenna
- Amplifiers in antenna and telecommunications systems
- CATV
- Power amplifier for DECT and PCN systems
