Infineon Technologies AG High Linearity RF Transistors BFP196WN

NPN silicon planar epitaxial transistor in 4-pin dual-emitter SOT343 package for low noise and low distortion wideband amplifiers. This RF transistor benefits from Infineon long-term experience in RF components and combines ease-of-use to stable volumes production, at benchmark quality and reliability. Summary of Features For high voltage applications VCE < 12 V Maximal power Ptot = 700 mW Transition frequency fT = 7.5 GHz Noise figure NFmin = 1.3 dB at 900 MHz Easy to use Pb-free (RoHS compliant) and halogen-free industry Standard SOT343 package with visible leads Potential Applications GNSS active antenna Amplifiers in antenna and telecommunications systems CATV Power amplifier for DECT and PCN systems