Infineon Technologies AG Discrete Semiconductor Products - Transistors - Bipolar (BJT) - RF BFP196WE6327

High Linearity Si- and SiGe:C-Transistors for use up to 6 GHz

Win Source Part Number: 1024107-BFP196WE6327
Category: Discrete Semiconductor Products>Transistors - Bipolar (BJT) - RF
Package: Bulk
Standard Package: 3,000
Mounting: SMD (SMT)
Power - Max: 700mW
Voltage - Collector Emitter Breakdown (Max): 12V
Current - Collector (Ic) (Max): 150mA
Gain: 12.5dB ~ 19dB
Transistor Type: NPN
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 8V
Frequency - Transition: 7.5GHz
Noise Figure (dB Typ @ f): 1.3dB ~ 2.3dB @ 900MHz ~ 1.8GHz
Package / Case: SC-82A, SOT-343
Supplier Device Package: PG-SOT343-4
Temperature Range - Operating: 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 67 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.21.0075
Mfr: Infineon Technologies
Other Names: INFINFBFP196WE6327,2156-BFP196WE6327

Trans RF BJT NPN 12V 0.15A 700mW Automotive AEC-Q101 4-Pin(3+Tab) SOT-343 T/R Product overview: BFP196WE6327 from Infineon Technologies is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include Automotive, 12V, 0.15A, 700mW. Search-friendly keywords include transistor, BJT, switching, amplification, Automotive, 12V, 0.15A, 700mW, Bipolar Transistor, Bipolar RF Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 283-BFP196WE6327 can be used for catalog matching and distributor lookup.