Infineon Technologies AG TRANSISTORS - RF Transistors (BJT) - BDP 949 E6327 BDP 949 E6327

Manufacturer: Infineon Technologies
Storage Condition: Dry storage cabinet & Humidity protection package
Win Source Part Number: 1049064-BDP 949 E6327
Current Rating: 3 A
Contact Plating: Tin
Mounting: SMD (SMT)
Frequency: 100 MHz
Polarity: NPN
Number of Elements: 1
Power Dissipation: 5 W
Gain Bandwidth Product: 100 MHz
Number of Pins: 4
Categories: RF Transistors(BJT)
Case / Package: SOT-223-4
Alternative Parts (Cross-Reference): BDP 949 E6327BDP949 E6327; BDP949-E6327; BDP949E6327;
Popularity: Low
Fake Threat In the Open Market: 37 pct.
Supply and Demand Status: Shortage
Maximum Operating Temperature: 150 °C
Lead Free: Yes
Mount: Surface Mount
RoHS: Compliant
Min Operating Temperature: -65 °C
Voltage Rating (DC): 60 V
Element Configuration: Single
Max Power Dissipation: 5 W
Max Breakdown Voltage: 60 V
Collector Base Voltage (VCBO): 60 V
Collector Emitter Breakdown Voltage: 60 V
Collector Emitter Voltage (VCEO): 60 V
Emitter Base Voltage (VEBO): 5 V
Max Collector Current: 3 A
Transition Frequency: 100 MHz

Small Signal Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon Product overview: BDP 949 E6327 from Infineon Technologies is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 3A, 60V. Search-friendly keywords include transistor, BJT, switching, amplification, 3A, 60V, Bipolar Transistor, Bipolar RF Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 283-BDP 949 E6327 can be used for catalog matching and distributor lookup.