Infineon Technologies AG High Linearity RF Transistors BFR193F

Description
NPN Silicon RF Transistor Summary of Features For low noise, high-gain amplifiers up to 2 GHz For linear broadband amplifiers fT = 8 GHz, NFmin = 1 dB at 900 MHz Pb-free (RoHS compliant) and halogen-free (WEEE compliant) product Potential Applications Wireless Communications LNA in RF Front-end For various applications like cellular and cordless phones, DECT, Tuners, FM, and RF modems. Applications Mobile devices and smartphones Security Camera and Video Doorbell
  • High Linearity RF Transistors - BFR193F - Infineon Technologies AG
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Description
NPN Silicon RF Transistor Summary of Features For low noise, high-gain amplifiers up to 2 GHz For linear broadband amplifiers fT = 8 GHz, NFmin = 1 dB at 900 MHz Pb-free (RoHS compliant) and halogen-free (WEEE compliant) product Potential Applications Wireless Communications LNA in RF Front-end For various applications like cellular and cordless phones, DECT, Tuners, FM, and RF modems. Applications Mobile devices and smartphones Security Camera and Video Doorbell
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Datasheet
Datasheet Summary
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The BFR193F is a low-noise silicon NPN RF transistor for amplifiers up to 2 GHz, housed in a TSFP-3 package. It features a transition frequency of 8 GHz, a minimum noise figure of 1 dB at 900 MHz, and a maximum collector-emitter voltage of 12 V. The device supports a collector current of 80 mA and total power dissipation of 580 mW at 72°C, with a junction temperature rating of 150°C. It is RoHS compliant and halogen-free, and qualifies under AEC-Q101. Thermal resistance from junction to solder point is 135 K/W.

Datasheet Summary
Powered by GS/AI

The BFR193F is a low-noise silicon NPN RF transistor for amplifiers up to 2 GHz, housed in a TSFP-3 package. It features a transition frequency of 8 GHz, a minimum noise figure of 1 dB at 900 MHz, and a maximum collector-emitter voltage of 12 V. The device supports a collector current of 80 mA and total power dissipation of 580 mW at 72°C, with a junction temperature rating of 150°C. It is RoHS compliant and halogen-free, and qualifies under AEC-Q101. Thermal resistance from junction to solder point is 135 K/W.

Suppliers

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Supplier Links
High Linearity RF Transistors - BFR193F - Infineon Technologies AG
Infineon Technologies AG
Neubiberg, Germany
High Linearity RF Transistors
BFR193F
High Linearity RF Transistors BFR193F
NPN Silicon RF Transistor Summary of Features For low noise, high-gain amplifiers up to 2 GHz For linear broadband amplifiers fT = 8 GHz, NFmin = 1 dB at 900 MHz Pb-free (RoHS compliant) and halogen-free (WEEE compliant) product Potential Applications Wireless Communications LNA in RF Front-end For various applications like cellular and cordless phones, DECT, Tuners, FM, and RF modems. Applications Mobile devices and smartphones Security Camera and Video Doorbell

NPN Silicon RF Transistor


Summary of Features

  • For low noise, high-gain amplifiers up to 2 GHz
  • For linear broadband amplifiers
  • fT = 8 GHz, NFmin = 1 dB at 900 MHz
  • Pb-free (RoHS compliant) and halogen-free (WEEE compliant) product

Potential Applications

  • Wireless Communications
  • LNA in RF Front-end
  • For various applications like cellular and cordless phones, DECT, Tuners, FM, and RF modems.

Applications

  • Mobile devices and smartphones
  • Security Camera and Video Doorbell
Supplier's Site Datasheet

Technical Specifications

  Infineon Technologies AG
Product Category RF Transistors
Product Number BFR193F
Product Name High Linearity RF Transistors
Package Type TSFP-3-1
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