Infineon Technologies AG 12V Bipolar Transistor BFS483 E6327

Description
TRANSISTOR RF NPN 12V SOT-363 Product overview: BFS483 E6327 from Infineon Technologies is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 12V. Search-friendly keywords include transistor, BJT, switching, amplification, 12V, Bipolar Transistor, Bipolar RF Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 283-BFS483 E6327 can be used for catalog matching and distributor lookup.
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Description
TRANSISTOR RF NPN 12V SOT-363 Product overview: BFS483 E6327 from Infineon Technologies is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 12V. Search-friendly keywords include transistor, BJT, switching, amplification, 12V, Bipolar Transistor, Bipolar RF Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 283-BFS483 E6327 can be used for catalog matching and distributor lookup.
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Suppliers

Company
Product
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Singapore
12V Bipolar Transistor
283-BFS483 E6327
12V Bipolar Transistor 283-BFS483 E6327
TRANSISTOR RF NPN 12V SOT-363 Product overview: BFS483 E6327 from Infineon Technologies is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 12V. Search-friendly keywords include transistor, BJT, switching, amplification, 12V, Bipolar Transistor, Bipolar RF Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 283-BFS483 E6327 can be used for catalog matching and distributor lookup.

TRANSISTOR RF NPN 12V SOT-363 Product overview: BFS483 E6327 from Infineon Technologies is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 12V. Search-friendly keywords include transistor, BJT, switching, amplification, 12V, Bipolar Transistor, Bipolar RF Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 283-BFS483 E6327 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
TRANSISTORS - RF Transistors (BJT) - BFS483 E6327 - 201189-BFS483 E6327 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - RF Transistors (BJT) - BFS483 E6327
201189-BFS483 E6327
TRANSISTORS - RF Transistors (BJT) - BFS483 E6327 201189-BFS483 E6327
Manufacturer: Infineon Technologies Win Source Part Number: 201189-BFS483 E6327 Packaging: Reel - TR Mounting: SMD (SMT) Gain: 19dB Frequency - Transition: 8GHz Transistor Polarity: 2 NPN (Dual) Noise Figure (dB Typ @ f): 0.9dB to 1.4dB @ 900MHz to 1.8GHz Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: 150°C (TJ) Case / Package: PG-SOT363-6 Maximum Current Collector: 65mA VCEO Maximum Collector-Emitter Breakdown Voltage: 12V Typical Gain (hFE) (Min): 70 @ 15mA, 8V Maximum Power Dissipation: 450mW Popularity: Medium Fake Threat In the Open Market: 52 pct. Supply and Demand Status: Balance

Manufacturer: Infineon Technologies
Win Source Part Number: 201189-BFS483 E6327
Packaging: Reel - TR
Mounting: SMD (SMT)
Gain: 19dB
Frequency - Transition: 8GHz
Transistor Polarity: 2 NPN (Dual)
Noise Figure (dB Typ @ f): 0.9dB to 1.4dB @ 900MHz to 1.8GHz
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: 150°C (TJ)
Case / Package: PG-SOT363-6
Maximum Current Collector: 65mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 12V
Typical Gain (hFE) (Min): 70 @ 15mA, 8V
Maximum Power Dissipation: 450mW
Popularity: Medium
Fake Threat In the Open Market: 52 pct.
Supply and Demand Status: Balance

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Technical Specifications

  ERSAELECTRONICS PTE. LTD. Win Source Electronics
Product Category Bipolar RF Transistors RF Transistors
Product Number 283-BFS483 E6327 201189-BFS483 E6327
Product Name 12V Bipolar Transistor TRANSISTORS - RF Transistors (BJT) - BFS483 E6327
Polarity NPN NPN; 2 NPN (Dual)
Package Type Reel - TR SOT3; PG-SOT363-6
Packing Method Reel - TR Tape Reel; Reel - TR
Noise Figure 0.9000 dB 0.9000 dB
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