Infineon Technologies AG TRANSISTORS - RF Transistors (BJT) - BFR360FH6327XTSA1 BFR360FH6327XTSA1

Description
Manufacturer: Infineon Technologies Win Source Part Number: 129105-BFR360FH6327X TSA1 Packaging: Reel - TR Mounting: SMD (SMT) Gain: 15.5dB Frequency - Transition: 14GHz Transistor Polarity: NPN Noise Figure (dB Typ @ f): 1dB @ 1.8GHz Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: PG-TSFP-3 Maximum Current Collector: 35mA VCEO Maximum Collector-Emitter Breakdown Voltage: 9V Typical Gain (hFE) (Min): 90 @ 15mA, 3V Maximum Power Dissipation: 210mW Popularity: Medium Fake Threat In the Open Market: 34 pct. Supply and Demand Status: Balance Quantity per package: 3k pcs
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Description
Manufacturer: Infineon Technologies Win Source Part Number: 129105-BFR360FH6327X TSA1 Packaging: Reel - TR Mounting: SMD (SMT) Gain: 15.5dB Frequency - Transition: 14GHz Transistor Polarity: NPN Noise Figure (dB Typ @ f): 1dB @ 1.8GHz Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: PG-TSFP-3 Maximum Current Collector: 35mA VCEO Maximum Collector-Emitter Breakdown Voltage: 9V Typical Gain (hFE) (Min): 90 @ 15mA, 3V Maximum Power Dissipation: 210mW Popularity: Medium Fake Threat In the Open Market: 34 pct. Supply and Demand Status: Balance Quantity per package: 3k pcs
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - RF Transistors (BJT) - BFR360FH6327XTSA1 - 129105-BFR360FH6327XTSA1 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - RF Transistors (BJT) - BFR360FH6327XTSA1
129105-BFR360FH6327XTSA1
TRANSISTORS - RF Transistors (BJT) - BFR360FH6327XTSA1 129105-BFR360FH6327XTSA1
Manufacturer: Infineon Technologies Win Source Part Number: 129105-BFR360FH6327X TSA1 Packaging: Reel - TR Mounting: SMD (SMT) Gain: 15.5dB Frequency - Transition: 14GHz Transistor Polarity: NPN Noise Figure (dB Typ @ f): 1dB @ 1.8GHz Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: PG-TSFP-3 Maximum Current Collector: 35mA VCEO Maximum Collector-Emitter Breakdown Voltage: 9V Typical Gain (hFE) (Min): 90 @ 15mA, 3V Maximum Power Dissipation: 210mW Popularity: Medium Fake Threat In the Open Market: 34 pct. Supply and Demand Status: Balance Quantity per package: 3k pcs

Manufacturer: Infineon Technologies
Win Source Part Number: 129105-BFR360FH6327XTSA1
Packaging: Reel - TR
Mounting: SMD (SMT)
Gain: 15.5dB
Frequency - Transition: 14GHz
Transistor Polarity: NPN
Noise Figure (dB Typ @ f): 1dB @ 1.8GHz
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: PG-TSFP-3
Maximum Current Collector: 35mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 9V
Typical Gain (hFE) (Min): 90 @ 15mA, 3V
Maximum Power Dissipation: 210mW
Popularity: Medium
Fake Threat In the Open Market: 34 pct.
Supply and Demand Status: Balance
Quantity per package: 3k pcs

Buy Now Datasheet
Singapore
9V 14GHZ Bipolar Transistor
283-BFR360FH6327XTSA1
9V 14GHZ Bipolar Transistor 283-BFR360FH6327XTSA1
RF TRANS NPN 9V 14GHZ TSFP-3 Product overview: BFR360FH6327XTSA1 from Infineon Technologies is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 9V, 14GHZ. Search-friendly keywords include transistor, BJT, switching, amplification, 9V, 14GHZ, Bipolar Transistor, Bipolar RF Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 283-BFR360FH6327XTSA 1 can be used for catalog matching and distributor lookup.

RF TRANS NPN 9V 14GHZ TSFP-3 Product overview: BFR360FH6327XTSA1 from Infineon Technologies is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 9V, 14GHZ. Search-friendly keywords include transistor, BJT, switching, amplification, 9V, 14GHZ, Bipolar Transistor, Bipolar RF Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 283-BFR360FH6327XTSA1 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Bipolar RF Transistors - BFR360FH6327XTSA1DKR-ND - DigiKey
Thief River Falls, MN, United States
Bipolar RF Transistors
BFR360FH6327XTSA1DKR-ND
Bipolar RF Transistors BFR360FH6327XTSA1DKR-ND
RF Transistor NPN 9V 35mA 14GHz 210mW Surface Mount PG-TSFP-3

RF Transistor NPN 9V 35mA 14GHz 210mW Surface Mount PG-TSFP-3

Buy Now Datasheet
Bipolar RF Transistors - BFR360FH6327XTSA1CT-ND - DigiKey
Thief River Falls, MN, United States
Bipolar RF Transistors
BFR360FH6327XTSA1CT-ND
Bipolar RF Transistors BFR360FH6327XTSA1CT-ND
RF Transistor NPN 9V 35mA 14GHz 210mW Surface Mount PG-TSFP-3

RF Transistor NPN 9V 35mA 14GHz 210mW Surface Mount PG-TSFP-3

Buy Now Datasheet
Bipolar RF Transistors - BFR360FH6327XTSA1TR-ND - DigiKey
Thief River Falls, MN, United States
Bipolar RF Transistors
BFR360FH6327XTSA1TR-ND
Bipolar RF Transistors BFR360FH6327XTSA1TR-ND
RF Transistor NPN 9V 35mA 14GHz 210mW Surface Mount PG-TSFP-3

RF Transistor NPN 9V 35mA 14GHz 210mW Surface Mount PG-TSFP-3

Buy Now Datasheet
Bipolar Rf Transistor, Npn, 6 V, 14 Ghz, 210 Mw, 35 Ma, 90 Rohs Compliant Infineon - 50Y1767 - Newark, An Avnet Company
Chicago, IL, United States
Bipolar Rf Transistor, Npn, 6 V, 14 Ghz, 210 Mw, 35 Ma, 90 Rohs Compliant Infineon
50Y1767
Bipolar Rf Transistor, Npn, 6 V, 14 Ghz, 210 Mw, 35 Ma, 90 Rohs Compliant Infineon 50Y1767
Bipolar - RF Transistor, NPN, 6 V, 14 GHz, 210 mW, 35 mA, 90 RoHS Compliant: Yes

Bipolar - RF Transistor, NPN, 6 V, 14 GHz, 210 mW, 35 mA, 90 RoHS Compliant: Yes

Supplier's Site Datasheet
Trans GP BJT NPN 6V 0.035A 3-Pin TSFP T/R - 376-BFR360FH6327XTSA1 - Utmel Electronic Limited
Hong Kong, China
Trans GP BJT NPN 6V 0.035A 3-Pin TSFP T/R
376-BFR360FH6327XTSA1
Trans GP BJT NPN 6V 0.035A 3-Pin TSFP T/R 376-BFR360FH6327XTSA1
Trans GP BJT NPN 6V 0.035A 3-Pin TSFP T/R

Trans GP BJT NPN 6V 0.035A 3-Pin TSFP T/R

Supplier's Site
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - BFR360FH6327XTSA1 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
BFR360FH6327XTSA1
Discrete Semiconductor Products - Transistors - Bipolar (BJT) BFR360FH6327XTSA1
RF TRANS NPN 9V 14GHZ TSFP-3

RF TRANS NPN 9V 14GHZ TSFP-3

Supplier's Site

Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD. DigiKey Newark, An Avnet Company Utmel Electronic Limited Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Bipolar RF Transistors Transistors Bipolar RF Transistors Bipolar RF Transistors Bipolar RF Transistors
Product Number 129105-BFR360FH6327XTSA1 283-BFR360FH6327XTSA1 BFR360FH6327XTSA1DKR-ND 50Y1767 376-BFR360FH6327XTSA1 BFR360FH6327XTSA1
Product Name TRANSISTORS - RF Transistors (BJT) - BFR360FH6327XTSA1 9V 14GHZ Bipolar Transistor Bipolar RF Transistors Bipolar Rf Transistor, Npn, 6 V, 14 Ghz, 210 Mw, 35 Ma, 90 Rohs Compliant Infineon Trans GP BJT NPN 6V 0.035A 3-Pin TSFP T/R Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity NPN; NPN NPN NPN NPN; NPN
Package Type SOT3; PG-TSFP-3 Tape & Reel (TR) SOT-723 TO-3
Packing Method Tape & Reel (TR) Tape Reel; Tape & Reel (TR) Tape Reel; Tape & Reel (TR),Cut Tape (CT),Digi-ReelR
IC(max) 35 milliamps 35 milliamps
VCEO 9 volts 6 volts 9 volts
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