Infineon Technologies AG 15V Bipolar Transistor BFG235 E6327

Description
TRANSISTOR RF NPN 15V SOT-223 Product overview: BFG235 E6327 from Infineon Technologies is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 15V. Search-friendly keywords include transistor, BJT, switching, amplification, 15V, Bipolar Transistor, Bipolar RF Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 283-BFG235 E6327 can be used for catalog matching and distributor lookup.
Request a Quote Datasheet
Description
TRANSISTOR RF NPN 15V SOT-223 Product overview: BFG235 E6327 from Infineon Technologies is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 15V. Search-friendly keywords include transistor, BJT, switching, amplification, 15V, Bipolar Transistor, Bipolar RF Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 283-BFG235 E6327 can be used for catalog matching and distributor lookup.
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Singapore
15V Bipolar Transistor
283-BFG235 E6327
15V Bipolar Transistor 283-BFG235 E6327
TRANSISTOR RF NPN 15V SOT-223 Product overview: BFG235 E6327 from Infineon Technologies is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 15V. Search-friendly keywords include transistor, BJT, switching, amplification, 15V, Bipolar Transistor, Bipolar RF Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 283-BFG235 E6327 can be used for catalog matching and distributor lookup.

TRANSISTOR RF NPN 15V SOT-223 Product overview: BFG235 E6327 from Infineon Technologies is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 15V. Search-friendly keywords include transistor, BJT, switching, amplification, 15V, Bipolar Transistor, Bipolar RF Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 283-BFG235 E6327 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
TRANSISTORS - RF Transistors (BJT) - BFG235 E6327 - 039634-BFG235 E6327 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - RF Transistors (BJT) - BFG235 E6327
039634-BFG235 E6327
TRANSISTORS - RF Transistors (BJT) - BFG235 E6327 039634-BFG235 E6327
Manufacturer: Infineon Technologies Win Source Part Number: 039634-BFG235 E6327 Packaging: Reel - TR Mounting: SMD (SMT) Gain: 12.5dB Frequency - Transition: 5.5GHz Transistor Polarity: NPN Noise Figure (dB Typ @ f): 1.7dB @ 900MHz Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: 150°C (TJ) Case / Package: PG-SOT223-4 Maximum Current Collector: 300mA VCEO Maximum Collector-Emitter Breakdown Voltage: 15V Typical Gain (hFE) (Min): 75 @ 200mA, 8V Maximum Power Dissipation: 2W Alternative Parts (Cross-Reference): BFG541; BFG19S; BFG19SE6327; BFG235E6327; Popularity: Medium Fake Threat In the Open Market: 40 pct. Supply and Demand Status: Balance

Manufacturer: Infineon Technologies
Win Source Part Number: 039634-BFG235 E6327
Packaging: Reel - TR
Mounting: SMD (SMT)
Gain: 12.5dB
Frequency - Transition: 5.5GHz
Transistor Polarity: NPN
Noise Figure (dB Typ @ f): 1.7dB @ 900MHz
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: 150°C (TJ)
Case / Package: PG-SOT223-4
Maximum Current Collector: 300mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 15V
Typical Gain (hFE) (Min): 75 @ 200mA, 8V
Maximum Power Dissipation: 2W
Alternative Parts (Cross-Reference): BFG541; BFG19S; BFG19SE6327; BFG235E6327;
Popularity: Medium
Fake Threat In the Open Market: 40 pct.
Supply and Demand Status: Balance

Buy Now Datasheet

Technical Specifications

  ERSAELECTRONICS PTE. LTD. Win Source Electronics
Product Category Bipolar RF Transistors RF Transistors
Product Number 283-BFG235 E6327 039634-BFG235 E6327
Product Name 15V Bipolar Transistor TRANSISTORS - RF Transistors (BJT) - BFG235 E6327
Polarity NPN NPN; NPN
Package Type Reel - TR SOT3; PG-SOT223-4
Packing Method Reel - TR Tape Reel; Reel - TR
Noise Figure 1.7 dB 1.7 dB
Unlock Full Specs
to access all available technical data