Infineon Technologies AG TRANSISTORS - RF Transistors (BJT) - BFG235 E6327 BFG235 E6327

Manufacturer: Infineon Technologies
Win Source Part Number: 039634-BFG235 E6327
Packaging: Reel - TR
Mounting: SMD (SMT)
Gain: 12.5dB
Frequency - Transition: 5.5GHz
Transistor Polarity: NPN
Noise Figure (dB Typ @ f): 1.7dB @ 900MHz
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: 150°C (TJ)
Case / Package: PG-SOT223-4
Maximum Current Collector: 300mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 15V
Typical Gain (hFE) (Min): 75 @ 200mA, 8V
Maximum Power Dissipation: 2W
Alternative Parts (Cross-Reference): BFG541; BFG19S; BFG19SE6327; BFG235E6327;
Popularity: Medium
Fake Threat In the Open Market: 40 pct.
Supply and Demand Status: Balance

TRANSISTOR RF NPN 15V SOT-223 Product overview: BFG235 E6327 from Infineon Technologies is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 15V. Search-friendly keywords include transistor, BJT, switching, amplification, 15V, Bipolar Transistor, Bipolar RF Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 283-BFG235 E6327 can be used for catalog matching and distributor lookup.