Infineon Technologies AG High Linearity RF Transistors BFP760

Description
The BFP760 is a Silicon Germanium Carbon (SiGe:C) NPN Heterojunction wideband Bipolar RF Transistor (HBT). Summary of Features Low noise figure NFmin = 0.95 dB @ 5.5 GHz, 3 V, 10 mA High gain Gms = 16.5 dB at 5.5 GHz, 3 V, 30 mA OIP3 = 27 dBm @ 5.5 GHz, 3 V, 30 mA Potential Applications Wireless communications: WLAN, WiMax and UWB Satellite communication systems: Navigation systems (GPS, Glonass), satellite radio (SDARs, DAB) and C-band LNB Multimedia applications such as portable TV, CATV, FM Radio ISM applications like RKE, AMR and Zigbee, as well as for emerging wireless applications
  • High Linearity RF Transistors - BFP760 - Infineon Technologies AG
    Infineon Technologies AG
  • TRANSISTORS - RF Transistors (BJT) - BFP760 - 1153264-BFP760 - Win Source Electronics
    Win Source Electronics
Request a Quote Datasheet
Description
The BFP760 is a Silicon Germanium Carbon (SiGe:C) NPN Heterojunction wideband Bipolar RF Transistor (HBT). Summary of Features Low noise figure NFmin = 0.95 dB @ 5.5 GHz, 3 V, 10 mA High gain Gms = 16.5 dB at 5.5 GHz, 3 V, 30 mA OIP3 = 27 dBm @ 5.5 GHz, 3 V, 30 mA Potential Applications Wireless communications: WLAN, WiMax and UWB Satellite communication systems: Navigation systems (GPS, Glonass), satellite radio (SDARs, DAB) and C-band LNB Multimedia applications such as portable TV, CATV, FM Radio ISM applications like RKE, AMR and Zigbee, as well as for emerging wireless applications
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
High Linearity RF Transistors - BFP760 - Infineon Technologies AG
Infineon Technologies AG
Neubiberg, Germany
High Linearity RF Transistors
BFP760
High Linearity RF Transistors BFP760
The BFP760 is a Silicon Germanium Carbon (SiGe:C) NPN Heterojunction wideband Bipolar RF Transistor (HBT). Summary of Features Low noise figure NFmin = 0.95 dB @ 5.5 GHz, 3 V, 10 mA High gain Gms = 16.5 dB at 5.5 GHz, 3 V, 30 mA OIP3 = 27 dBm @ 5.5 GHz, 3 V, 30 mA Potential Applications Wireless communications: WLAN, WiMax and UWB Satellite communication systems: Navigation systems (GPS, Glonass), satellite radio (SDARs, DAB) and C-band LNB Multimedia applications such as portable TV, CATV, FM Radio ISM applications like RKE, AMR and Zigbee, as well as for emerging wireless applications

The BFP760 is a Silicon Germanium Carbon (SiGe:C) NPN Heterojunction wideband Bipolar RF Transistor (HBT).


Summary of Features

  • Low noise figure NFmin = 0.95 dB @ 5.5 GHz, 3 V, 10 mA
  • High gain Gms = 16.5 dB at 5.5 GHz, 3 V, 30 mA
  • OIP3 = 27 dBm @ 5.5 GHz, 3 V, 30 mA

Potential Applications

  • Wireless communications: WLAN, WiMax and UWB
  • Satellite communication systems: Navigation systems (GPS, Glonass), satellite radio (SDARs, DAB) and C-band LNB
  • Multimedia applications such as portable TV, CATV, FM Radio
  • ISM applications like RKE, AMR and Zigbee, as well as for emerging wireless applications
Supplier's Site Datasheet
TRANSISTORS - RF Transistors (BJT) - BFP760 - 1153264-BFP760 - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - RF Transistors (BJT) - BFP760
1153264-BFP760
TRANSISTORS - RF Transistors (BJT) - BFP760 1153264-BFP760
Manufacturer: Infineon Technologies Win Source Part Number: 1153264-BFP760 Manufacturer Homepage: www.infineon.com Popularity: Medium Fake Threat In the Open Market: 70 pct. Supply and Demand Status: Limited

Manufacturer: Infineon Technologies
Win Source Part Number: 1153264-BFP760
Manufacturer Homepage: www.infineon.com
Popularity: Medium
Fake Threat In the Open Market: 70 pct.
Supply and Demand Status: Limited

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Technical Specifications

  Infineon Technologies AG Win Source Electronics
Product Category RF Transistors Bipolar RF Transistors
Product Number BFP760 1153264-BFP760
Product Name High Linearity RF Transistors TRANSISTORS - RF Transistors (BJT) - BFP760
Package Type SOT343-4-2 SOT3
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