Infineon Technologies AG High Linearity RF Transistors BFP760

Description
The BFP760 is a Silicon Germanium Carbon (SiGe:C) NPN Heterojunction wideband Bipolar RF Transistor (HBT). Summary of Features Low noise figure NFmin = 0.95 dB @ 5.5 GHz, 3 V, 10 mA High gain Gms = 16.5 dB at 5.5 GHz, 3 V, 30 mA OIP3 = 27 dBm @ 5.5 GHz, 3 V, 30 mA Potential Applications Wireless communications: WLAN, WiMax and UWB Satellite communication systems: Navigation systems (GPS, Glonass), satellite radio (SDARs, DAB) and C-band LNB Multimedia applications such as portable TV, CATV, FM Radio ISM applications like RKE, AMR and Zigbee, as well as for emerging wireless applications
  • High Linearity RF Transistors - BFP760 - Infineon Technologies AG
    Infineon Technologies AG
  • TRANSISTORS - RF Transistors (BJT) - BFP760 - 1153264-BFP760 - Win Source Electronics
    Win Source Electronics
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Description
The BFP760 is a Silicon Germanium Carbon (SiGe:C) NPN Heterojunction wideband Bipolar RF Transistor (HBT). Summary of Features Low noise figure NFmin = 0.95 dB @ 5.5 GHz, 3 V, 10 mA High gain Gms = 16.5 dB at 5.5 GHz, 3 V, 30 mA OIP3 = 27 dBm @ 5.5 GHz, 3 V, 30 mA Potential Applications Wireless communications: WLAN, WiMax and UWB Satellite communication systems: Navigation systems (GPS, Glonass), satellite radio (SDARs, DAB) and C-band LNB Multimedia applications such as portable TV, CATV, FM Radio ISM applications like RKE, AMR and Zigbee, as well as for emerging wireless applications
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Datasheet
Datasheet Summary
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The BFP760 is a silicon germanium carbon (SiGe:C) NPN RF heterojunction bipolar transistor (HBT) in a SOT343 package measuring 3.1 mm × 2.1 mm. It operates with a maximum collector-emitter voltage of 4.0 V and a collector current of 70 mA, dissipating up to 240 mW at 95 °C. It achieves a minimum noise figure of 0.95 dB at 5.5 GHz, 3 V, and 10 mA, a maximum power gain of 16.5 dB at 5.5 GHz, 3 V, and 30 mA, and a third-order intercept point of 27 dBm under the same conditions. The transition frequency is 45 GHz. The device is qualified to AEC-Q101 and meets industrial standards per JEDEC JESD47, JESD22, and J-STD-020. It is ESD-sensitive and requires appropriate handling.

Datasheet Summary
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The BFP760 is a silicon germanium carbon (SiGe:C) NPN RF heterojunction bipolar transistor (HBT) in a SOT343 package measuring 3.1 mm × 2.1 mm. It operates with a maximum collector-emitter voltage of 4.0 V and a collector current of 70 mA, dissipating up to 240 mW at 95 °C. It achieves a minimum noise figure of 0.95 dB at 5.5 GHz, 3 V, and 10 mA, a maximum power gain of 16.5 dB at 5.5 GHz, 3 V, and 30 mA, and a third-order intercept point of 27 dBm under the same conditions. The transition frequency is 45 GHz. The device is qualified to AEC-Q101 and meets industrial standards per JEDEC JESD47, JESD22, and J-STD-020. It is ESD-sensitive and requires appropriate handling.

Suppliers

Company
Product
Description
Supplier Links
High Linearity RF Transistors - BFP760 - Infineon Technologies AG
Infineon Technologies AG
Neubiberg, Germany
High Linearity RF Transistors
BFP760
High Linearity RF Transistors BFP760
The BFP760 is a Silicon Germanium Carbon (SiGe:C) NPN Heterojunction wideband Bipolar RF Transistor (HBT). Summary of Features Low noise figure NFmin = 0.95 dB @ 5.5 GHz, 3 V, 10 mA High gain Gms = 16.5 dB at 5.5 GHz, 3 V, 30 mA OIP3 = 27 dBm @ 5.5 GHz, 3 V, 30 mA Potential Applications Wireless communications: WLAN, WiMax and UWB Satellite communication systems: Navigation systems (GPS, Glonass), satellite radio (SDARs, DAB) and C-band LNB Multimedia applications such as portable TV, CATV, FM Radio ISM applications like RKE, AMR and Zigbee, as well as for emerging wireless applications

The BFP760 is a Silicon Germanium Carbon (SiGe:C) NPN Heterojunction wideband Bipolar RF Transistor (HBT).


Summary of Features

  • Low noise figure NFmin = 0.95 dB @ 5.5 GHz, 3 V, 10 mA
  • High gain Gms = 16.5 dB at 5.5 GHz, 3 V, 30 mA
  • OIP3 = 27 dBm @ 5.5 GHz, 3 V, 30 mA

Potential Applications

  • Wireless communications: WLAN, WiMax and UWB
  • Satellite communication systems: Navigation systems (GPS, Glonass), satellite radio (SDARs, DAB) and C-band LNB
  • Multimedia applications such as portable TV, CATV, FM Radio
  • ISM applications like RKE, AMR and Zigbee, as well as for emerging wireless applications
Supplier's Site Datasheet
TRANSISTORS - RF Transistors (BJT) - BFP760 - 1153264-BFP760 - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - RF Transistors (BJT) - BFP760
1153264-BFP760
TRANSISTORS - RF Transistors (BJT) - BFP760 1153264-BFP760
Manufacturer: Infineon Technologies Win Source Part Number: 1153264-BFP760 Manufacturer Homepage: www.infineon.com Popularity: Medium Fake Threat In the Open Market: 70 pct. Supply and Demand Status: Limited

Manufacturer: Infineon Technologies
Win Source Part Number: 1153264-BFP760
Manufacturer Homepage: www.infineon.com
Popularity: Medium
Fake Threat In the Open Market: 70 pct.
Supply and Demand Status: Limited

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ERSAELECTRONICS PTE. LTD.
Singapore, Singapore
Bipolar Transistor
283-BFP760
Bipolar Transistor 283-BFP760
Low Noise Silicon Germanium Bipolar RF Transistor Product overview: BFP760 from Infineon Technologies is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include transistor, BJT, switching, amplification, Bipolar Transistor, Bipolar RF Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 283-BFP760 can be used for catalog matching and distributor lookup.

Low Noise Silicon Germanium Bipolar RF Transistor Product overview: BFP760 from Infineon Technologies is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include transistor, BJT, switching, amplification, Bipolar Transistor, Bipolar RF Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 283-BFP760 can be used for catalog matching and distributor lookup.

Supplier's Site

Technical Specifications

  Infineon Technologies AG Win Source Electronics ERSAELECTRONICS PTE. LTD.
Product Category RF Transistors Bipolar RF Transistors Bipolar RF Transistors
Product Number BFP760 1153264-BFP760 283-BFP760
Product Name High Linearity RF Transistors TRANSISTORS - RF Transistors (BJT) - BFP760 Bipolar Transistor
Package Type SOT343-4-2 SOT3
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