Infineon Technologies AG Bipolar RF Transistors BF776H6327

Description
RF TRANSISTOR, NPN
Description
RF TRANSISTOR, NPN
Datasheet
Datasheet Summary
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The BF776 is a high-performance NPN bipolar RF transistor designed for low-noise amplification in non-automotive wireless applications such as WLAN, WiMax, UWB, Bluetooth, GPS, and LTE. It is packaged in a SOT343 package with a footprint of 2.1 mm × 1.3 mm and visible leads. The device features a minimum noise figure of 0.8 dB at 1.8 GHz, a transition frequency of 46 GHz, and a collector-emitter voltage rating of 4.0 V at 25 °C. It is RoHS compliant and has a total power dissipation of 200 mW. The junction temperature ranges from -55 °C to 150 °C, with a thermal resistance from junction to soldering point of ≤300 K/W.

Datasheet Summary
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The BF776 is a high-performance NPN bipolar RF transistor designed for low-noise amplification in non-automotive wireless applications such as WLAN, WiMax, UWB, Bluetooth, GPS, and LTE. It is packaged in a SOT343 package with a footprint of 2.1 mm × 1.3 mm and visible leads. The device features a minimum noise figure of 0.8 dB at 1.8 GHz, a transition frequency of 46 GHz, and a collector-emitter voltage rating of 4.0 V at 25 °C. It is RoHS compliant and has a total power dissipation of 200 mW. The junction temperature ranges from -55 °C to 150 °C, with a thermal resistance from junction to soldering point of ≤300 K/W.

Suppliers

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Product
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Supplier Links
Bipolar RF Transistors - BF776H6327 - ODG (Origin Data Global)
Shenzhen, China
Bipolar RF Transistors
BF776H6327
Bipolar RF Transistors BF776H6327
RF TRANSISTOR, NPN

RF TRANSISTOR, NPN

Supplier's Site Datasheet

Technical Specifications

  ODG (Origin Data Global)
Product Category Bipolar RF Transistors
Product Number BF776H6327
Product Name Bipolar RF Transistors
Polarity NPN; NPN
Package Type SC-82A, SOT-343
IC(max) 50 milliamps
VCEO 4.7 volts
Power Gain 24 dB
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