Infineon Technologies AG HiRel Silicon Bipolar Transistor BFY181 (ES)

Description
HiRel Microwave Transistor Summary of Features Hermetically sealed microwave package fT= 8 GHz F = 2.2 dB at 2 GHz Type Variant No. 03 ESA Space Qualified ESSCC Detail Spec. No.: 5611/006/03 B Potential Applications For low noise, high-gain broadband amplifiers at collector currents from 0,5 mA to 12 mA. Applications Space applications
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Description
HiRel Microwave Transistor Summary of Features Hermetically sealed microwave package fT= 8 GHz F = 2.2 dB at 2 GHz Type Variant No. 03 ESA Space Qualified ESSCC Detail Spec. No.: 5611/006/03 B Potential Applications For low noise, high-gain broadband amplifiers at collector currents from 0,5 mA to 12 mA. Applications Space applications
Request a Quote Datasheet

Suppliers

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HiRel Silicon Bipolar Transistor - BFY181 (ES) - Infineon Technologies AG
Neubiberg, Germany
HiRel Silicon Bipolar Transistor
BFY181 (ES)
HiRel Silicon Bipolar Transistor BFY181 (ES)
HiRel Microwave Transistor Summary of Features Hermetically sealed microwave package fT= 8 GHz F = 2.2 dB at 2 GHz Type Variant No. 03 ESA Space Qualified ESSCC Detail Spec. No.: 5611/006/03 B Potential Applications For low noise, high-gain broadband amplifiers at collector currents from 0,5 mA to 12 mA. Applications Space applications

HiRel Microwave Transistor


Summary of Features

  • Hermetically sealed microwave package
  • fT= 8 GHz
  • F = 2.2 dB at 2 GHz
  • Type Variant No. 03

ESA Space Qualified ESSCC Detail Spec. No.: 5611/006/03 B


Potential Applications

  • For low noise, high-gain broadband amplifiers at collector currents from 0,5 mA to 12 mA.

Applications

  • Space applications
Supplier's Site Datasheet

Technical Specifications

  Infineon Technologies AG
Product Category Bipolar RF Transistors
Product Number BFY181 (ES)
Product Name HiRel Silicon Bipolar Transistor
Package Type Micro-X
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