BFY181(ES) is a hermetically sealed, space-qualified NPN silicon RF transistor designed for low-noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12 mA. It operates with a maximum collector-emitter voltage of 12 V and a maximum collector current of 20 mA, dissipating up to 175 mW at a case temperature of 137 °C. The transistor has a transition frequency of 8 GHz and a noise figure of 2.2 dB at 2 GHz. It is housed in a Micro-X1 package with four pins and is rated for operating and storage temperatures from -65 °C to 200 °C. The part complies with ESCC Detail Specification No. 5611/006, Type Variant No. 03.
HiRel Microwave Transistor
Summary of Features
ESA Space Qualified ESSCC Detail Spec. No.: 5611/006/03 B
Potential Applications
Applications
| Infineon Technologies AG | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | BFY181 (ES) |
| Product Name | HiRel Silicon Bipolar Transistor |
| Package Type | Micro-X |
