Infineon Technologies AG Single Bipolar Transistors BCW61BE6327HTSA1

Description
Bipolar (BJT) Transistor PNP 32V 100mA 250MHz 330mW Surface Mount PG-SOT23
Request a Quote Datasheet
Description
Bipolar (BJT) Transistor PNP 32V 100mA 250MHz 330mW Surface Mount PG-SOT23
Request a Quote Datasheet

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Single Bipolar Transistors - BCW61BE6327HTSA1TR-ND - DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
BCW61BE6327HTSA1TR-ND
Single Bipolar Transistors BCW61BE6327HTSA1TR-ND
Bipolar (BJT) Transistor PNP 32V 100mA 250MHz 330mW Surface Mount PG-SOT23

Bipolar (BJT) Transistor PNP 32V 100mA 250MHz 330mW Surface Mount PG-SOT23

Buy Now Datasheet
TRANSISTORS - Transistors (BJT) - Single - BCW61BE6327HTSA1 - 1022777-BCW61BE6327HTSA1 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single - BCW61BE6327HTSA1
1022777-BCW61BE6327HTSA1
TRANSISTORS - Transistors (BJT) - Single - BCW61BE6327HTSA1 1022777-BCW61BE6327HTSA1
Manufacturer: Infineon Technologies Win Source Part Number: 1022777-BCW61BE6327H TSA1 Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 250MHz Transistor Polarity: PNP Categories: Discrete Semiconductor Products Temperature Range - Operating: 150°C (TJ) Case / Package: PG-SOT23-3 Maximum Current Collector: 100mA VCEO Maximum Collector-Emitter Breakdown Voltage: 32V Max Vce (sat): 550mV @ 1.25mA, 50mA Collector Cut-off Current(Max): 20nA (ICBO) Typical Gain (hFE) (Min): 180 @ 2mA, 5V Maximum Power Dissipation: 330mW Popularity: Medium Fake Threat In the Open Market: 69 pct. Supply and Demand Status: Balance

Manufacturer: Infineon Technologies
Win Source Part Number: 1022777-BCW61BE6327HTSA1
Packaging: Reel - TR
Mounting: SMD (SMT)
Frequency - Transition: 250MHz
Transistor Polarity: PNP
Categories: Discrete Semiconductor Products
Temperature Range - Operating: 150°C (TJ)
Case / Package: PG-SOT23-3
Maximum Current Collector: 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 32V
Max Vce (sat): 550mV @ 1.25mA, 50mA
Collector Cut-off Current(Max): 20nA (ICBO)
Typical Gain (hFE) (Min): 180 @ 2mA, 5V
Maximum Power Dissipation: 330mW
Popularity: Medium
Fake Threat In the Open Market: 69 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - BCW61BE6327HTSA1 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
BCW61BE6327HTSA1
Discrete Semiconductor Products - Transistors - Bipolar (BJT) BCW61BE6327HTSA1
TRANS PNP 32V 0.1A SOT23

TRANS PNP 32V 0.1A SOT23

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Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Transistors Bipolar RF Transistors
Product Number BCW61BE6327HTSA1TR-ND 1022777-BCW61BE6327HTSA1 BCW61BE6327HTSA1
Product Name Single Bipolar Transistors TRANSISTORS - Transistors (BJT) - Single - BCW61BE6327HTSA1 Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity PNP PNP; PNP
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