NPN silicon RF transistor for low-noise, high-gain amplification up to 2 GHz, housed in a TSLP-3-1 package with dimensions of 0.6 mm x 0.5 mm x 0.35 mm. It has a collector-emitter voltage rating of 12 V, a maximum collector current of 80 mA, and a total power dissipation of 580 mW at a case temperature of 89 °C. The transition frequency is 8 GHz, with a minimum noise figure of 1 dB at 900 MHz and 1.6 dB at 1.8 GHz. The device is RoHS compliant and qualified to AEC-Q101.
NPN Silicon RF Transistor
Summary of Features
Potential Applications
NPN Silicon RF Transistor / Trans RF BJT NPN 12V 0.08A 580mW Automotive 3-Pin TSLP T/R Product overview: BFR193L3 from Infineon Technologies is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include Automotive, 12V, 0.08A, 580mW. Search-friendly keywords include transistor, BJT, switching, amplification, Automotive, 12V, 0.08A, 580mW, Bipolar Transistor, Bipolar RF Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 283-BFR193L3 can be used for catalog matching and distributor lookup.
| Infineon Technologies AG | ERSAELECTRONICS PTE. LTD. | |
|---|---|---|
| Product Category | RF Transistors | Bipolar RF Transistors |
| Product Number | BFR193L3 | 283-BFR193L3 |
| Product Name | High Linearity RF Transistors | Automotive 12V 0.08A 580mW Bipolar Transistor |
| Package Type | TSLP-3-1 |
