Infineon Technologies AG TRANSISTORS - Transistors (BJT) - Single - BDP949H6327XTSA1 BDP949H6327XTSA1

Description
Manufacturer: Infineon Technologies Win Source Part Number: 769937-BDP949H6327XT SA1 Packaging: Reel package Operating Temperature Range: 150°C (TJ) Package: TO-261-4, TO-261AA Mounting: SMD Power - Max: 5W Transistor Type: NPN Frequency - Transition: 100MHz Categories: Discrete Semiconductor Products Manufacturer Package: PG-SOT223-4 Current - Collector (Ic) (Maximum): 3A Voltage - Collector Emitter Breakdown (Maximum): 60V Vce Saturation (Maximum) @ Ib, Ic: 500mV @ 200mA, 2A Current - Collector Cutoff (Maximum): 100nA (ICBO) DC Current Gain (hFE) (Minimum) @ Ic, Vce: 100 @ 500mA, 1V Alternative Parts (Cross-Reference): 2STN1360; BDP949H6327XTSA1; UFZT651TC; BDP 949 E6327; Popularity: Medium Fake Threat In the Open Market: 61 pct. Supply and Demand Status: Balance
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Description
Manufacturer: Infineon Technologies Win Source Part Number: 769937-BDP949H6327XT SA1 Packaging: Reel package Operating Temperature Range: 150°C (TJ) Package: TO-261-4, TO-261AA Mounting: SMD Power - Max: 5W Transistor Type: NPN Frequency - Transition: 100MHz Categories: Discrete Semiconductor Products Manufacturer Package: PG-SOT223-4 Current - Collector (Ic) (Maximum): 3A Voltage - Collector Emitter Breakdown (Maximum): 60V Vce Saturation (Maximum) @ Ib, Ic: 500mV @ 200mA, 2A Current - Collector Cutoff (Maximum): 100nA (ICBO) DC Current Gain (hFE) (Minimum) @ Ic, Vce: 100 @ 500mA, 1V Alternative Parts (Cross-Reference): 2STN1360; BDP949H6327XTSA1; UFZT651TC; BDP 949 E6327; Popularity: Medium Fake Threat In the Open Market: 61 pct. Supply and Demand Status: Balance
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors (BJT) - Single - BDP949H6327XTSA1 - 769937-BDP949H6327XTSA1 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single - BDP949H6327XTSA1
769937-BDP949H6327XTSA1
TRANSISTORS - Transistors (BJT) - Single - BDP949H6327XTSA1 769937-BDP949H6327XTSA1
Manufacturer: Infineon Technologies Win Source Part Number: 769937-BDP949H6327XT SA1 Packaging: Reel package Operating Temperature Range: 150°C (TJ) Package: TO-261-4, TO-261AA Mounting: SMD Power - Max: 5W Transistor Type: NPN Frequency - Transition: 100MHz Categories: Discrete Semiconductor Products Manufacturer Package: PG-SOT223-4 Current - Collector (Ic) (Maximum): 3A Voltage - Collector Emitter Breakdown (Maximum): 60V Vce Saturation (Maximum) @ Ib, Ic: 500mV @ 200mA, 2A Current - Collector Cutoff (Maximum): 100nA (ICBO) DC Current Gain (hFE) (Minimum) @ Ic, Vce: 100 @ 500mA, 1V Alternative Parts (Cross-Reference): 2STN1360; BDP949H6327XTSA1; UFZT651TC; BDP 949 E6327; Popularity: Medium Fake Threat In the Open Market: 61 pct. Supply and Demand Status: Balance

Manufacturer: Infineon Technologies
Win Source Part Number: 769937-BDP949H6327XTSA1
Packaging: Reel package
Operating Temperature Range: 150°C (TJ)
Package: TO-261-4, TO-261AA
Mounting: SMD
Power - Max: 5W
Transistor Type: NPN
Frequency - Transition: 100MHz
Categories: Discrete Semiconductor Products
Manufacturer Package: PG-SOT223-4
Current - Collector (Ic) (Maximum): 3A
Voltage - Collector Emitter Breakdown (Maximum): 60V
Vce Saturation (Maximum) @ Ib, Ic: 500mV @ 200mA, 2A
Current - Collector Cutoff (Maximum): 100nA (ICBO)
DC Current Gain (hFE) (Minimum) @ Ic, Vce: 100 @ 500mA, 1V
Alternative Parts (Cross-Reference): 2STN1360; BDP949H6327XTSA1; UFZT651TC; BDP 949 E6327;
Popularity: Medium
Fake Threat In the Open Market: 61 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Single Bipolar Transistors - BDP949H6327XTSA1 - ODG (Origin Data Global)
Shenzhen, China
Single Bipolar Transistors
BDP949H6327XTSA1
Single Bipolar Transistors BDP949H6327XTSA1
TRANS NPN 60V 3A SOT223-4

TRANS NPN 60V 3A SOT223-4

Supplier's Site Datasheet
Singapore
60V 3A Bipolar Transistor
276-BDP949H6327XTSA1
60V 3A Bipolar Transistor 276-BDP949H6327XTSA1
TRANS NPN 60V 3A SOT223-4 Product overview: BDP949H6327XTSA1 from Infineon Technologies is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 3A. Search-friendly keywords include transistor, BJT, switching, amplification, 60V, 3A, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-BDP949H6327XTSA1 can be used for catalog matching and distributor lookup.

TRANS NPN 60V 3A SOT223-4 Product overview: BDP949H6327XTSA1 from Infineon Technologies is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 3A. Search-friendly keywords include transistor, BJT, switching, amplification, 60V, 3A, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-BDP949H6327XTSA1 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Single Bipolar Transistors - 448-BDP949H6327XTSA1TR-ND - DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
448-BDP949H6327XTSA1TR-ND
Single Bipolar Transistors 448-BDP949H6327XTSA1TR-ND
Bipolar (BJT) Transistor NPN 60V 3A 100MHz 5W Surface Mount PG-SOT223-4-10

Bipolar (BJT) Transistor NPN 60V 3A 100MHz 5W Surface Mount PG-SOT223-4-10

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - BDP949H6327XTSA1 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
BDP949H6327XTSA1
Discrete Semiconductor Products - Transistors - Bipolar (BJT) BDP949H6327XTSA1
TRANS NPN 60V 3A SOT223-4

TRANS NPN 60V 3A SOT223-4

Supplier's Site

Technical Specifications

  Win Source Electronics ODG (Origin Data Global) ERSAELECTRONICS PTE. LTD. DigiKey Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Bipolar RF Transistors Bipolar RF Transistors Transistors Bipolar RF Transistors
Product Number 769937-BDP949H6327XTSA1 BDP949H6327XTSA1 276-BDP949H6327XTSA1 448-BDP949H6327XTSA1TR-ND BDP949H6327XTSA1
Product Name TRANSISTORS - Transistors (BJT) - Single - BDP949H6327XTSA1 Single Bipolar Transistors 60V 3A Bipolar Transistor Single Bipolar Transistors Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity NPN NPN; NPN NPN NPN
Package Type SOT3 TO-261-4, TO-261AA Tape & Reel (TR) TO-261-4, TO-261AA
IC(max) 3000 milliamps 3000 milliamps 3000 milliamps
VCEO 60 volts 60 volts 60 volts
Operating Frequency 100 MHz
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