Infineon Technologies AG TRANSISTORS - RF Transistors (BJT) - BFR360TE6327 BFR360TE6327

Description
Manufacturer: Infineon Technologies Win Source Part Number: 201171-BFR360TE6327 Packaging: Reel - TR Mounting: SMD (SMT) Gain: 13.5dB Frequency - Transition: 14GHz Transistor Polarity: NPN Noise Figure (dB Typ @ f): 1dB @ 1.8GHz Categories: Discrete Semiconductor Products Temperature Range - Operating: 150°C (TJ) Case / Package: PG-SC-75 Maximum Current Collector: 35mA VCEO Maximum Collector-Emitter Breakdown Voltage: 9V Typical Gain (hFE) (Min): 60 @ 15mA, 3V Maximum Power Dissipation: 210mW Popularity: Medium Fake Threat In the Open Market: 28 pct. Supply and Demand Status: Sufficient
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Description
Manufacturer: Infineon Technologies Win Source Part Number: 201171-BFR360TE6327 Packaging: Reel - TR Mounting: SMD (SMT) Gain: 13.5dB Frequency - Transition: 14GHz Transistor Polarity: NPN Noise Figure (dB Typ @ f): 1dB @ 1.8GHz Categories: Discrete Semiconductor Products Temperature Range - Operating: 150°C (TJ) Case / Package: PG-SC-75 Maximum Current Collector: 35mA VCEO Maximum Collector-Emitter Breakdown Voltage: 9V Typical Gain (hFE) (Min): 60 @ 15mA, 3V Maximum Power Dissipation: 210mW Popularity: Medium Fake Threat In the Open Market: 28 pct. Supply and Demand Status: Sufficient
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Suppliers

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TRANSISTORS - RF Transistors (BJT) - BFR360TE6327 - 201171-BFR360TE6327 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - RF Transistors (BJT) - BFR360TE6327
201171-BFR360TE6327
TRANSISTORS - RF Transistors (BJT) - BFR360TE6327 201171-BFR360TE6327
Manufacturer: Infineon Technologies Win Source Part Number: 201171-BFR360TE6327 Packaging: Reel - TR Mounting: SMD (SMT) Gain: 13.5dB Frequency - Transition: 14GHz Transistor Polarity: NPN Noise Figure (dB Typ @ f): 1dB @ 1.8GHz Categories: Discrete Semiconductor Products Temperature Range - Operating: 150°C (TJ) Case / Package: PG-SC-75 Maximum Current Collector: 35mA VCEO Maximum Collector-Emitter Breakdown Voltage: 9V Typical Gain (hFE) (Min): 60 @ 15mA, 3V Maximum Power Dissipation: 210mW Popularity: Medium Fake Threat In the Open Market: 28 pct. Supply and Demand Status: Sufficient

Manufacturer: Infineon Technologies
Win Source Part Number: 201171-BFR360TE6327
Packaging: Reel - TR
Mounting: SMD (SMT)
Gain: 13.5dB
Frequency - Transition: 14GHz
Transistor Polarity: NPN
Noise Figure (dB Typ @ f): 1dB @ 1.8GHz
Categories: Discrete Semiconductor Products
Temperature Range - Operating: 150°C (TJ)
Case / Package: PG-SC-75
Maximum Current Collector: 35mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 9V
Typical Gain (hFE) (Min): 60 @ 15mA, 3V
Maximum Power Dissipation: 210mW
Popularity: Medium
Fake Threat In the Open Market: 28 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
Singapore
6V Bipolar Transistor
283-BFR360TE6327
6V Bipolar Transistor 283-BFR360TE6327
TRANSISTOR RF NPN 6V SC-75 Product overview: BFR360TE6327 from Infineon Technologies is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 6V. Search-friendly keywords include transistor, BJT, switching, amplification, 6V, Bipolar Transistor, Bipolar RF Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 283-BFR360TE6327 can be used for catalog matching and distributor lookup.

TRANSISTOR RF NPN 6V SC-75 Product overview: BFR360TE6327 from Infineon Technologies is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 6V. Search-friendly keywords include transistor, BJT, switching, amplification, 6V, Bipolar Transistor, Bipolar RF Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 283-BFR360TE6327 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet

Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD.
Product Category RF Transistors Bipolar RF Transistors
Product Number 201171-BFR360TE6327 283-BFR360TE6327
Product Name TRANSISTORS - RF Transistors (BJT) - BFR360TE6327 6V Bipolar Transistor
Polarity NPN; NPN NPN
Package Type SOT3; PG-SC-75 Reel - TR
Packing Method Tape Reel; Reel - TR Reel - TR
TJ 150 C (302 F) 150 C (302 F)
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