Infineon Technologies AG TRANSISTORS - RF Transistors (BJT) - BFS460L6E6327 BFS460L6E6327

Manufacturer: Infineon Technologies
Win Source Part Number: 201184-BFS460L6E6327
Packaging: Reel - TR
Mounting: SMD (SMT)
Gain: 10dB to 14.5dB
Frequency - Transition: 22GHz
Transistor Polarity: 2 NPN (Dual)
Noise Figure (dB Typ @ f): 1.1dB to 1.4dB @ 1.8GHz to 3GHz
Categories: Discrete Semiconductor Products
Temperature Range - Operating: 150°C (TJ)
Case / Package: PG-TSLP-6
Maximum Current Collector: 50mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 5.8V
Typical Gain (hFE) (Min): 90 @ 20mA, 3V
Maximum Power Dissipation: 200mW
Popularity: Medium
Fake Threat In the Open Market: 29 pct.
Supply and Demand Status: Sufficient

TRANSISTOR RF TWIN NPN TSLP-6 Product overview: BFS460L6E6327 from Infineon Technologies is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include transistor, BJT, switching, amplification, Bipolar Transistor, Bipolar RF Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 283-BFS460L6E6327 can be used for catalog matching and distributor lookup.