Infineon Technologies AG TRANSISTORS - RF Transistors (BJT) - BFP640E6327BTSA1 BFP640E6327BTSA1

Manufacturer: Infineon Technologies
Win Source Part Number: 113549-BFP640E6327BTSA1
Packaging: Reel - TR
Mounting: SMD (SMT)
Gain: 24dB
Frequency - Transition: 40GHz
Transistor Polarity: NPN
Noise Figure (dB Typ @ f): 0.65dB to 1.2dB @ 1.8GHz to 6GHz
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: 150°C (TJ)
Case / Package: PG-SOT343-4
Maximum Current Collector: 50mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 4.5V
Typical Gain (hFE) (Min): 110 @ 30mA, 3V
Maximum Power Dissipation: 200mW
Popularity: Medium
Fake Threat In the Open Market: 56 pct.
Supply and Demand Status: Balance
Quantity per package: 3k pcs

RF Transistor NPN 4.5V 50mA 40GHz 200mW Surface Mount PG-SOT343-4

RF TRANS NPN 4.5V 40GHZ SOT343-4 Product overview: BFP640E6327BTSA1 from Infineon Technologies is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 4.5V, 40GHZ. Search-friendly keywords include transistor, BJT, switching, amplification, 4.5V, 40GHZ, Bipolar Transistor, Bipolar RF Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 283-BFP640E6327BTSA1 can be used for catalog matching and distributor lookup.