Infineon Technologies AG Bipolar RF Transistors BFP182WE6327HTSA1

Description
RF Transistor NPN 12V 35mA 8GHz 250mW Surface Mount PG-SOT343-4
Request a Quote Datasheet
Description
RF Transistor NPN 12V 35mA 8GHz 250mW Surface Mount PG-SOT343-4
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Bipolar RF Transistors - BFP182WE6327HTSA1TR-ND - DigiKey
Thief River Falls, MN, United States
Bipolar RF Transistors
BFP182WE6327HTSA1TR-ND
Bipolar RF Transistors BFP182WE6327HTSA1TR-ND
RF Transistor NPN 12V 35mA 8GHz 250mW Surface Mount PG-SOT343-4

RF Transistor NPN 12V 35mA 8GHz 250mW Surface Mount PG-SOT343-4

Buy Now Datasheet
Singapore
12V 8GHZ Bipolar Transistor
283-BFP182WE6327HTSA1
12V 8GHZ Bipolar Transistor 283-BFP182WE6327HTSA1
RF TRANS NPN 12V 8GHZ SOT343-4 Product overview: BFP182WE6327HTSA1 from Infineon Technologies is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 12V, 8GHZ. Search-friendly keywords include transistor, BJT, switching, amplification, 12V, 8GHZ, Bipolar Transistor, Bipolar RF Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 283-BFP182WE6327HTSA 1 can be used for catalog matching and distributor lookup.

RF TRANS NPN 12V 8GHZ SOT343-4 Product overview: BFP182WE6327HTSA1 from Infineon Technologies is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 12V, 8GHZ. Search-friendly keywords include transistor, BJT, switching, amplification, 12V, 8GHZ, Bipolar Transistor, Bipolar RF Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 283-BFP182WE6327HTSA1 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
TRANSISTORS - RF Transistors (BJT) - BFP182WE6327HTSA1 - 096744-BFP182WE6327HTSA1 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - RF Transistors (BJT) - BFP182WE6327HTSA1
096744-BFP182WE6327HTSA1
TRANSISTORS - RF Transistors (BJT) - BFP182WE6327HTSA1 096744-BFP182WE6327HTSA1
Manufacturer: Infineon Technologies Win Source Part Number: 096744-BFP182WE6327H TSA1 Packaging: Reel - TR Mounting: SMD (SMT) Gain: 22dB Frequency - Transition: 8GHz Transistor Polarity: NPN Noise Figure (dB Typ @ f): 0.9dB to 1.3dB @ 900MHz to 1.8GHz Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: 150°C (TJ) Case / Package: PG-SOT343-4 Maximum Current Collector: 35mA VCEO Maximum Collector-Emitter Breakdown Voltage: 12V Typical Gain (hFE) (Min): 70 @ 10mA, 8V Maximum Power Dissipation: 250mW Popularity: Medium Fake Threat In the Open Market: 56 pct. Supply and Demand Status: Sufficient

Manufacturer: Infineon Technologies
Win Source Part Number: 096744-BFP182WE6327HTSA1
Packaging: Reel - TR
Mounting: SMD (SMT)
Gain: 22dB
Frequency - Transition: 8GHz
Transistor Polarity: NPN
Noise Figure (dB Typ @ f): 0.9dB to 1.3dB @ 900MHz to 1.8GHz
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: 150°C (TJ)
Case / Package: PG-SOT343-4
Maximum Current Collector: 35mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 12V
Typical Gain (hFE) (Min): 70 @ 10mA, 8V
Maximum Power Dissipation: 250mW
Popularity: Medium
Fake Threat In the Open Market: 56 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
Bipolar RF Transistors - BFP182WE6327HTSA1 - ODG (Origin Data Global)
Shenzhen, China
Bipolar RF Transistors
BFP182WE6327HTSA1
Bipolar RF Transistors BFP182WE6327HTSA1
RF TRANS NPN 12V 8GHZ SOT343-4

RF TRANS NPN 12V 8GHZ SOT343-4

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - BFP182WE6327HTSA1 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
BFP182WE6327HTSA1
Discrete Semiconductor Products - Transistors - Bipolar (BJT) BFP182WE6327HTSA1
RF TRANS NPN 12V 8GHZ SOT343-4

RF TRANS NPN 12V 8GHZ SOT343-4

Supplier's Site

Technical Specifications

  DigiKey ERSAELECTRONICS PTE. LTD. Win Source Electronics ODG (Origin Data Global) Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Bipolar RF Transistors RF Transistors Bipolar RF Transistors Bipolar RF Transistors
Product Number BFP182WE6327HTSA1TR-ND 283-BFP182WE6327HTSA1 096744-BFP182WE6327HTSA1 BFP182WE6327HTSA1 BFP182WE6327HTSA1
Product Name Bipolar RF Transistors 12V 8GHZ Bipolar Transistor TRANSISTORS - RF Transistors (BJT) - BFP182WE6327HTSA1 Bipolar RF Transistors Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity NPN NPN; NPN NPN; NPN
Package Type SC-82A, SOT-343 Tape & Reel (TR) SOT3; PG-SOT343-4 SC-82A, SOT-343
Packing Method Tape & Reel (TR) Tape Reel; Reel - TR Tape Reel; Tape & Reel (TR),Cut Tape (CT)
VCEO 12 volts 12 volts 12 volts
Noise Figure 0.9000 dB 0.9000 dB 0.9000 to ? dB
Unlock Full Specs
to access all available technical data