Infineon Technologies AG High Linearity RF Transistors BFP650

Description
High Linearity Low Noise SiGe:C NPN RF Transistor Summary of Features Highly linear low noise driver amplifier for all RF frontends up to 4.5 GHz Output compression point OP1dB = 17 dBm at 70 mA, 3V, 2.4 GHz, 50Ω system Output 3rd order intermodulation point OIP3 = 30 dBm at 70 mA, 3 V, 2.4 GHz, 50 Ω system Maximum available gain Gma = 17.5 dB at 70 mA, 3V, 2.4 GHz Minimum noise figure NFmin = 1 dB at 30 mA, 3V, 2.4 GHz Based on Infineon´s reliable, high volume SiGe:C wafer technology Easy to use Pb-free (RoHS compliant) standard package with visible leads Potential Applications Driver amplifier ISM bands 434 and 868 MHz 1.9 GHz cordless phones CATV LNA Transmitter driver amplifier 2.4 GHz WLAN / Bluetooth, 2.4 / 3.5 GHz WiMAX Output stage LNA for active antennas TV, GPS, SDARS 2.4 / 5 GHz WLAN 2.4 / 3.5 / 5 GHz WiMAX, etc. Suitable for 5 - 10.5 GHz oscillators
  • High Linearity RF Transistors - BFP650 - Infineon Technologies AG
    Infineon Technologies AG
  • Bipolar RF Transistors - BFP650-ND - DigiKey
    DigiKey
  • TRANSISTORS - RF Transistors (BJT) - BFP650 - 1153258-BFP650 - Win Source Electronics
    Win Source Electronics
  • Discrete Semiconductor Products - Transistors - Bipolar (BJT) - BFP650 - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
  • Bipolar RF Transistors - BFP650 - ODG (Origin Data Global)
    ODG (Origin Data Global)
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Description
High Linearity Low Noise SiGe:C NPN RF Transistor Summary of Features Highly linear low noise driver amplifier for all RF frontends up to 4.5 GHz Output compression point OP1dB = 17 dBm at 70 mA, 3V, 2.4 GHz, 50Ω system Output 3rd order intermodulation point OIP3 = 30 dBm at 70 mA, 3 V, 2.4 GHz, 50 Ω system Maximum available gain Gma = 17.5 dB at 70 mA, 3V, 2.4 GHz Minimum noise figure NFmin = 1 dB at 30 mA, 3V, 2.4 GHz Based on Infineon´s reliable, high volume SiGe:C wafer technology Easy to use Pb-free (RoHS compliant) standard package with visible leads Potential Applications Driver amplifier ISM bands 434 and 868 MHz 1.9 GHz cordless phones CATV LNA Transmitter driver amplifier 2.4 GHz WLAN / Bluetooth, 2.4 / 3.5 GHz WiMAX Output stage LNA for active antennas TV, GPS, SDARS 2.4 / 5 GHz WLAN 2.4 / 3.5 / 5 GHz WiMAX, etc. Suitable for 5 - 10.5 GHz oscillators
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Datasheet
Datasheet Summary
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The BFP650 is a silicon NPN RF bipolar transistor based on SiGe:C technology, designed for high-linearity, low-noise amplification up to 5.5 GHz. It is packaged in a SOT343 case with a 4-pin configuration labeled B, E, C, E. The device has a transition frequency of 42 GHz, a minimum noise figure of 1 dB at 2.4 GHz, 3 V, and 30 mA, and an output third-order intercept point of 30 dBm at 2.4 GHz, 3 V, and 70 mA. Maximum available gain is 17.5 dB at those conditions. Collector-emitter voltage is rated to 4 V, collector current to 150 mA, and total power dissipation to 500 mW at 78 °C. Junction temperature rating is 150 °C. It is qualified for industrial applications under JEDEC JESD47, JESD22, J-STD-020, and AEC-Q101 standards. The device is RoHS compliant and requires ESD handling precautions.

Datasheet Summary
Powered by GS/AI

The BFP650 is a silicon NPN RF bipolar transistor based on SiGe:C technology, designed for high-linearity, low-noise amplification up to 5.5 GHz. It is packaged in a SOT343 case with a 4-pin configuration labeled B, E, C, E. The device has a transition frequency of 42 GHz, a minimum noise figure of 1 dB at 2.4 GHz, 3 V, and 30 mA, and an output third-order intercept point of 30 dBm at 2.4 GHz, 3 V, and 70 mA. Maximum available gain is 17.5 dB at those conditions. Collector-emitter voltage is rated to 4 V, collector current to 150 mA, and total power dissipation to 500 mW at 78 °C. Junction temperature rating is 150 °C. It is qualified for industrial applications under JEDEC JESD47, JESD22, J-STD-020, and AEC-Q101 standards. The device is RoHS compliant and requires ESD handling precautions.

Suppliers

Company
Product
Description
Supplier Links
High Linearity RF Transistors - BFP650 - Infineon Technologies AG
Infineon Technologies AG
Neubiberg, Germany
High Linearity RF Transistors
BFP650
High Linearity RF Transistors BFP650
High Linearity Low Noise SiGe:C NPN RF Transistor Summary of Features Highly linear low noise driver amplifier for all RF frontends up to 4.5 GHz Output compression point OP1dB = 17 dBm at 70 mA, 3V, 2.4 GHz, 50Ω system Output 3rd order intermodulation point OIP3 = 30 dBm at 70 mA, 3 V, 2.4 GHz, 50 Ω system Maximum available gain Gma = 17.5 dB at 70 mA, 3V, 2.4 GHz Minimum noise figure NFmin = 1 dB at 30 mA, 3V, 2.4 GHz Based on Infineon´s reliable, high volume SiGe:C wafer technology Easy to use Pb-free (RoHS compliant) standard package with visible leads Potential Applications Driver amplifier ISM bands 434 and 868 MHz 1.9 GHz cordless phones CATV LNA Transmitter driver amplifier 2.4 GHz WLAN / Bluetooth, 2.4 / 3.5 GHz WiMAX Output stage LNA for active antennas TV, GPS, SDARS 2.4 / 5 GHz WLAN 2.4 / 3.5 / 5 GHz WiMAX, etc. Suitable for 5 - 10.5 GHz oscillators

High Linearity Low Noise SiGe:C NPN RF Transistor


Summary of Features

  • Highly linear low noise driver amplifier for all RF frontends up to 4.5 GHz
  • Output compression point OP1dB = 17 dBm at 70 mA, 3V, 2.4 GHz, 50Ω system
  • Output 3rd order intermodulation point OIP3 = 30 dBm at 70 mA, 3 V, 2.4 GHz, 50 Ω system
  • Maximum available gain Gma = 17.5 dB at 70 mA, 3V, 2.4 GHz
  • Minimum noise figure NFmin = 1 dB at 30 mA, 3V, 2.4 GHz
  • Based on Infineon´s reliable, high volume SiGe:C wafer technology
  • Easy to use Pb-free (RoHS compliant) standard package with visible leads

Potential Applications

  • Driver amplifier
  • ISM bands 434 and 868 MHz
  • 1.9 GHz cordless phones
  • CATV LNA
  • Transmitter driver amplifier
  • 2.4 GHz WLAN / Bluetooth, 2.4 / 3.5 GHz WiMAX
  • Output stage LNA for active antennas
  • TV, GPS, SDARS
  • 2.4 / 5 GHz WLAN
  • 2.4 / 3.5 / 5 GHz WiMAX, etc.
  • Suitable for 5 - 10.5 GHz oscillators
Supplier's Site Datasheet
Bipolar RF Transistors - BFP650-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Bipolar RF Transistors
BFP650-ND
Bipolar RF Transistors BFP650-ND
RF Transistor NPN 4.5V 150mA 37GHz 500mW Surface Mount PG-SOT343-3D

RF Transistor NPN 4.5V 150mA 37GHz 500mW Surface Mount PG-SOT343-3D

Buy Now Datasheet
TRANSISTORS - RF Transistors (BJT) - BFP650 - 1153258-BFP650 - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - RF Transistors (BJT) - BFP650
1153258-BFP650
TRANSISTORS - RF Transistors (BJT) - BFP650 1153258-BFP650
Manufacturer: Infineon Technologies Win Source Part Number: 1153258-BFP650 Manufacturer Homepage: www.infineon.com Popularity: Medium Fake Threat In the Open Market: 34 pct. Supply and Demand Status: Balance

Manufacturer: Infineon Technologies
Win Source Part Number: 1153258-BFP650
Manufacturer Homepage: www.infineon.com
Popularity: Medium
Fake Threat In the Open Market: 34 pct.
Supply and Demand Status: Balance

Buy Now
ERSAELECTRONICS PTE. LTD.
Singapore, Singapore
4.5V 37GHZ Bipolar Transistor
283-BFP650
4.5V 37GHZ Bipolar Transistor 283-BFP650
RF TRANS NPN 4.5V 37GHZ SOT343-4 Product overview: BFP650 from Infineon Technologies is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 4.5V, 37GHZ. Search-friendly keywords include transistor, BJT, switching, amplification, 4.5V, 37GHZ, Bipolar Transistor, Bipolar RF Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 283-BFP650 can be used for catalog matching and distributor lookup.

RF TRANS NPN 4.5V 37GHZ SOT343-4 Product overview: BFP650 from Infineon Technologies is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 4.5V, 37GHZ. Search-friendly keywords include transistor, BJT, switching, amplification, 4.5V, 37GHZ, Bipolar Transistor, Bipolar RF Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 283-BFP650 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - BFP650 - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
BFP650
Discrete Semiconductor Products - Transistors - Bipolar (BJT) BFP650
RF TRANS NPN 4.5V 37GHZ SOT343-4

RF TRANS NPN 4.5V 37GHZ SOT343-4

Supplier's Site
Bipolar RF Transistors - BFP650 - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Bipolar RF Transistors
BFP650
Bipolar RF Transistors BFP650
RF TRANS NPN 4.5V 37GHZ SOT343-4

RF TRANS NPN 4.5V 37GHZ SOT343-4

Supplier's Site Datasheet

Technical Specifications

  Infineon Technologies AG DigiKey Win Source Electronics ERSAELECTRONICS PTE. LTD. Shenzhen Shengyu Electronics Technology Limited ODG (Origin Data Global)
Product Category RF Transistors Transistors RF Transistors Bipolar RF Transistors Bipolar RF Transistors Bipolar RF Transistors
Product Number BFP650 BFP650-ND 1153258-BFP650 283-BFP650 BFP650 BFP650
Product Name High Linearity RF Transistors Bipolar RF Transistors TRANSISTORS - RF Transistors (BJT) - BFP650 4.5V 37GHZ Bipolar Transistor Discrete Semiconductor Products - Transistors - Bipolar (BJT) Bipolar RF Transistors
Package Type SOT343 SC-82A, SOT-343 SOT3 Bulk SC-82A, SOT-343
Packing Method Tape Reel; TAPE & REEL Bulk Bulk; Bulk
Polarity NPN NPN; NPN
VCEO 4.5 volts 4.5 volts 4.5 volts
Noise Figure 0.8000 dB 0.8000 to ? dB
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