Win Source Part Number: 967135-BFR193E6327HT
Category: Discrete Semiconductor Products>Transistors
Package: Tape & Reel
Standard Package: 3,000
Mounting: SMD (SMT)
Power - Max: 580mW
Voltage - Collector Emitter Breakdown (Max): 12V
Current - Collector (Ic) (Max): 80mA
Gain: 10dB ~ 15dB
Transistor Type: NPN
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 30mA, 8V
Frequency - Transition: 8GHz
Noise Figure (dB Typ @ f): 1dB ~ 1.6dB @ 900MHz ~ 1.8GHz
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: PG-SOT23
Temperature Range - Operating: 150°C (TJ)
Alternative Parts (Cross-Reference): 2SCR523EBTL; BC848BMTF; 2SCR502EBTL; 2SCR522EBTL; BFU550XRR; BFU730LXZBFR 193 E6327; BFR193; BFR193 E 6327; BFR193 E6327; BFR193 E6327 HTSA1; BFR193-E6327; BFR193E6327; BFR193E6327HTSA1.; SP000011056;
ECCN: EAR99
Fake Threat In the Open Market: 74 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.21.0075
Mfr: Infineon Technologies
Other Names: BFR193E6327HTSA1TR,B
Base Product Number: BFR193
RF Transistor NPN 12V 80mA 8GHz 580mW Surface Mount PG-SOT23
RF Transistor NPN 12V 80mA 8GHz 580mW Surface Mount PG-SOT23
RF Transistor NPN 12V 80mA 8GHz 580mW Surface Mount PG-SOT23
RF TRANS NPN 12V 8GHZ SOT23-3 Product overview: BFR193E6327HTSA1 from Infineon Technologies is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 12V, 8GHZ, SOT23. Search-friendly keywords include transistor, BJT, switching, amplification, 12V, 8GHZ, SOT23, Bipolar Transistor, Bipolar RF Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 283-BFR193E6327HTSA1
RF TRANS NPN 12V 8GHZ SOT23-3
RF TRANS, NPN, 12V, 0.08A/150DEG C/0.58W; Transistor Polarity:NPN; Collector Emitter Voltage Max:12V; Transition Frequency:8GHz; Power Dissipation:580mW; Continuous Collector Current:80mA; No. of Pins:3Pins; Product Range:- RoHS Compliant: Yes
RF TRANS NPN 12V 8GHZ SOT23-3
| Win Source Electronics | DigiKey | ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|
| Product Category | RF Transistors | Transistors | Bipolar RF Transistors | Bipolar RF Transistors | RF Transistors | Bipolar RF Transistors |
| Product Number | 967135-BFR193E6327HTSA1 | BFR193E6327HTSA1TR-ND | 283-BFR193E6327HTSA1 | BFR193E6327HTSA1 | 79Y4025 | BFR193E6327HTSA1 |
| Product Name | Discrete Semiconductor Products - Transistors - Bipolar (BJT) - RF | Bipolar RF Transistors | 12V 8GHZ SOT23 Bipolar Transistor | Bipolar RF Transistors | Rf Trans, Npn, 12V, 0.08A/150Deg C/0.58W; Transistor Polarity Infineon | Discrete Semiconductor Products - Transistors - Bipolar (BJT) |
| Polarity | NPN | NPN | NPN; NPN | NPN | ||
| Package Type | SOT3 | SOT23; TO-236-3, SC-59, SOT-23-3 | Tape & Reel (TR) | SOT23; TO-236-3, SC-59, SOT-23-3 | TO-3 | |
| TJ | 150 C (302 F) | 150 C (302 F) | 150 C (302 F) | |||
| Power Gain | 10 to 15 dB | 15 dB | 10 dB | |||
| Output Power | 0.5800 watts | 0.5800 watts | 0.5800 watts |
