Infineon Technologies AG High Linearity RF Transistors BFR193W

Description
NPN Silicon RF Transistor Summary of Features For low noise, high-gain amplifiers up to 2 GHz For linear broadband amplifiers fT = 8 GHz, NFmin = 1 dB at 900 MHz Pb-free (RoHS compliant) package Potential Applications Wireless Communications LNA in RF Front-end For various applications like cellular and cordless phones, DECT, Tuners, FM, and RF modems.
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Description
NPN Silicon RF Transistor Summary of Features For low noise, high-gain amplifiers up to 2 GHz For linear broadband amplifiers fT = 8 GHz, NFmin = 1 dB at 900 MHz Pb-free (RoHS compliant) package Potential Applications Wireless Communications LNA in RF Front-end For various applications like cellular and cordless phones, DECT, Tuners, FM, and RF modems.
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
High Linearity RF Transistors - BFR193W - Infineon Technologies AG
Neubiberg, Germany
High Linearity RF Transistors
BFR193W
High Linearity RF Transistors BFR193W
NPN Silicon RF Transistor Summary of Features For low noise, high-gain amplifiers up to 2 GHz For linear broadband amplifiers fT = 8 GHz, NFmin = 1 dB at 900 MHz Pb-free (RoHS compliant) package Potential Applications Wireless Communications LNA in RF Front-end For various applications like cellular and cordless phones, DECT, Tuners, FM, and RF modems.

NPN Silicon RF Transistor


Summary of Features

  • For low noise, high-gain amplifiers up to 2 GHz
  • For linear broadband amplifiers
  • fT = 8 GHz, NFmin = 1 dB at 900 MHz
  • Pb-free (RoHS compliant) package

Potential Applications

  • Wireless Communications
  • LNA in RF Front-end
  • For various applications like cellular and cordless phones, DECT, Tuners, FM, and RF modems.
Supplier's Site Datasheet

Technical Specifications

  Infineon Technologies AG
Product Category RF Transistors
Product Number BFR193W
Product Name High Linearity RF Transistors
Package Type SOT323; SOT323
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