Infineon Technologies AG TRANSISTORS - RF Transistors (BJT) - BFS17SH6327XTSA1 BFS17SH6327XTSA1

Manufacturer: Infineon Technologies
Win Source Part Number: 108987-BFS17SH6327XTSA1
Packaging: Reel - TR
Mounting: SMD (SMT)
Frequency - Transition: 1.4GHz
Transistor Polarity: 2 NPN (Dual)
Noise Figure (dB Typ @ f): 3dB to 5dB @ 800MHz
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: PG-SOT363-6
Maximum Current Collector: 25mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 15V
Typical Gain (hFE) (Min): 40 @ 2mA, 1V
Maximum Power Dissipation: 280mW
Popularity: Medium
Fake Threat In the Open Market: 39 pct.
Supply and Demand Status: Balance

RF Transistor 2 NPN (Dual) 15V 25mA 1.4GHz 280mW Surface Mount PG-SOT363-6

RF TRANS 2NPN 15V 1.4GHZ SOT363

RF TRANS 2NPN 15V 1.4GHZ SOT363 Product overview: BFS17SH6327XTSA1 from Infineon Technologies is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 15V, 1.4GHZ. Search-friendly keywords include transistor, BJT, switching, amplification, 15V, 1.4GHZ, Bipolar Transistor, Bipolar RF Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 283-BFS17SH6327XTSA1 can be used for catalog matching and distributor lookup.