The BFR360F is a low-profile silicon NPN RF bipolar transistor designed for low-noise amplifier applications in FM, AM radio, and sub-1 GHz ISM bands. It is packaged in a TSFP-3-1 case with dimensions defined by its pin configuration, and operates with a maximum collector-emitter voltage of 6 V under open-base conditions. The device features a minimum noise figure of 1 dB at 1.8 GHz, 3 V, and 3 mA, and a power gain of 15.5 dB at 1.8 GHz, 3 V, and 15 mA. It meets industrial reliability standards per JEDEC JESD47/20/22 and has a maximum total power dissipation of 210 mW at a junction temperature of 98 °C. The transistor is ESD-sensitive and has a maximum junction temperature of 150 °C.
NPN Silicon RF Transistor
Summary of Features
Potential Applications
| Infineon Technologies AG | |
|---|---|
| Product Category | RF Transistors |
| Product Number | BFR360F |
| Product Name | Low Noise RF Transistors |
| Package Type | TSFP-3-1 |
