Infineon Technologies AG Low Noise RF Transistors BFR360F

Description
NPN Silicon RF Transistor Summary of Features Low noise amplifier for low current applications Collector design supports 5V supply voltage For oscillators up to 3.5 GHz Low noise figure 1.0 dB at 1.8 GHz Pb-free (RoHS compliant) package Potential Applications Wireless Communications For amplifier and oscillator applications in RF Front-end
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Description
NPN Silicon RF Transistor Summary of Features Low noise amplifier for low current applications Collector design supports 5V supply voltage For oscillators up to 3.5 GHz Low noise figure 1.0 dB at 1.8 GHz Pb-free (RoHS compliant) package Potential Applications Wireless Communications For amplifier and oscillator applications in RF Front-end
Request a Quote Datasheet

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Low Noise RF Transistors - BFR360F - Infineon Technologies AG
Neubiberg, Germany
Low Noise RF Transistors
BFR360F
Low Noise RF Transistors BFR360F
NPN Silicon RF Transistor Summary of Features Low noise amplifier for low current applications Collector design supports 5V supply voltage For oscillators up to 3.5 GHz Low noise figure 1.0 dB at 1.8 GHz Pb-free (RoHS compliant) package Potential Applications Wireless Communications For amplifier and oscillator applications in RF Front-end

NPN Silicon RF Transistor


Summary of Features

  • Low noise amplifier for low current applications
  • Collector design supports 5V supply voltage
  • For oscillators up to 3.5 GHz
  • Low noise figure 1.0 dB at 1.8 GHz
  • Pb-free (RoHS compliant) package

Potential Applications

  • Wireless Communications
  • For amplifier and oscillator applications in RF Front-end
Supplier's Site Datasheet

Technical Specifications

  Infineon Technologies AG
Product Category RF Transistors
Product Number BFR360F
Product Name Low Noise RF Transistors
Package Type TSFP-3-1
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