Infineon Technologies AG High Linearity RF Transistors BFR93AW

The BFR93AW is a low-noise silicon bipolar RF transistor designed for low-distortion amplifiers and oscillators up to 2 GHz at collector currents between 5 mA and 30 mA. It is packaged in a SOT323 case with three leads, rated for a maximum collector-emitter voltage of 12 V, a collector current of 90 mA, and a total power dissipation of 300 mW at 25 °C. The device has a junction temperature rating of 150 °C and a thermal resistance from junction to soldering point of 140 K/W. It meets AEC-Q101 qualification standards and is RoHS compliant and halogen-free. The transition frequency exceeds 4.5 GHz, with a minimum noise figure of 1.5 dB at 900 MHz and 2.6 dB at 1.8 GHz, and maximum available power gain of 15.5 dB at 900 MHz.