Infineon Technologies AG High Linearity RF Transistors BFR93AW

Description
NPN Silicon RF Transistor Summary of Features For low distortion amplifiers and oscillators up to 2 GHz at collector currents from 5 mA to 30 mA Pb-free (RoHS compliant) package Potential Applications Wireless Communications LNA in RF Front-end For various applications like cellular and cordless phones, DECT, Tuners, FM, and RF modems.
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Description
NPN Silicon RF Transistor Summary of Features For low distortion amplifiers and oscillators up to 2 GHz at collector currents from 5 mA to 30 mA Pb-free (RoHS compliant) package Potential Applications Wireless Communications LNA in RF Front-end For various applications like cellular and cordless phones, DECT, Tuners, FM, and RF modems.
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Suppliers

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High Linearity RF Transistors - BFR93AW - Infineon Technologies AG
Neubiberg, Germany
High Linearity RF Transistors
BFR93AW
High Linearity RF Transistors BFR93AW
NPN Silicon RF Transistor Summary of Features For low distortion amplifiers and oscillators up to 2 GHz at collector currents from 5 mA to 30 mA Pb-free (RoHS compliant) package Potential Applications Wireless Communications LNA in RF Front-end For various applications like cellular and cordless phones, DECT, Tuners, FM, and RF modems.

NPN Silicon RF Transistor


Summary of Features

  • For low distortion amplifiers and oscillators up to 2 GHz at collector currents from 5 mA to 30 mA
  • Pb-free (RoHS compliant) package

Potential Applications

  • Wireless Communications
  • LNA in RF Front-end
  • For various applications like cellular and cordless phones, DECT, Tuners, FM, and RF modems.
Supplier's Site Datasheet

Technical Specifications

  Infineon Technologies AG
Product Category RF Transistors
Product Number BFR93AW
Product Name High Linearity RF Transistors
Package Type SOT323; SOT323
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