Infineon Technologies AG Single Bipolar Transistors BDP950H6327XTSA1

Bipolar (BJT) Transistor PNP 60V 3A 100MHz 5W Surface Mount PG-SOT223-4-10

Manufacturer: Infineon Technologies
Win Source Part Number: 126162-BDP950H6327XTSA1
Packaging: Reel - TR
Mounting: SMD (SMT)
Frequency - Transition: 100MHz
Transistor Polarity: PNP
Categories: Discrete Semiconductor Products
Temperature Range - Operating: 150°C (TJ)
Case / Package: PG-SOT223-4
Maximum Current Collector: 3A
VCEO Maximum Collector-Emitter Breakdown Voltage: 60V
Max Vce (sat): 500mV @ 200mA, 2A
Collector Cut-off Current(Max): 100nA (ICBO)
Typical Gain (hFE) (Min): 85 @ 500mA, 1V
Maximum Power Dissipation: 5W
Popularity: Medium
Fake Threat In the Open Market: 52 pct.
Supply and Demand Status: Balance

TRANS PNP 60V 3A SOT223-4 Product overview: BDP950H6327XTSA1 from Infineon Technologies is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 3A. Search-friendly keywords include transistor, BJT, switching, amplification, 60V, 3A, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-BDP950H6327XTSA1 can be used for catalog matching and distributor lookup.