Infineon Technologies AG TRANSISTORS - RF Transistors (BJT) - BFP740FESDH6327XTSA1 BFP740FESDH6327XTSA1

Manufacturer: Infineon Technologies
Win Source Part Number: 102816-BFP740FESDH6327XTSA1
Packaging: Reel - TR
Mounting: SMD (SMT)
Gain: 9dB to 31dB
Frequency - Transition: 47GHz
Transistor Polarity: NPN
Noise Figure (dB Typ @ f): 0.5dB to 1.45dB @ 150MHz to 10GHz
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: 4-TSFP
Maximum Current Collector: 45mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 4.7V
Typical Gain (hFE) (Min): 160 @ 25mA, 3V
Maximum Power Dissipation: 160mW
Popularity: Medium
Fake Threat In the Open Market: 49 pct.
Supply and Demand Status: Balance
Quantity per package: 3k pcs

RF Transistor NPN 4.7V 45mA 47GHz 160mW Surface Mount 4-TSFP

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RF Transistor NPN 4.7V 45mA 47GHz 160mW Surface Mount 4-TSFP

RF TRANS NPN 4.7V 47GHZ 4TSFP Product overview: BFP740FESDH6327XTSA1 from Infineon Technologies is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 4.7V, 47GHZ. Search-friendly keywords include transistor, BJT, switching, amplification, 4.7V, 47GHZ, Bipolar Transistor, Bipolar RF Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 283-BFP740FESDH6327XTSA1 can be used for catalog matching and distributor lookup.

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