RF TRANS NPN 12V 8GHZ SOT23-3 Product overview: BFR182E6327HTSA1 from Infineon Technologies is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 12V, 8GHZ, SOT23. Search-friendly keywords include transistor, BJT, switching, amplification, 12V, 8GHZ, SOT23, Bipolar Transistor, Bipolar RF Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 283-BFR182E6327HTSA1
Manufacturer: Infineon Technologies
Win Source Part Number: 1325018-BFR182E6327H
Category: Discrete Semiconductor Products>Transistors
Packaging: Reel - TR
Standard Package: 3,000
Mounting: Surface Mount
Power - Max: 250mW
Voltage - Collector Emitter Breakdown (Max): 12V
Current - Collector (Ic) (Max): 35mA
Gain: 12dB ~ 18dB
Transistor Type: NPN
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 8V
Frequency - Transition: 8GHz
Noise Figure (dB Typ @ f): 0.9dB ~ 1.3dB @ 900MHz ~ 1.8GHz
Supplier Device Package: PG-SOT23
Temperature Range - Operating: 150°C (TJ)
Case / Package: TO-236-3, SC-59, SOT-23-3
ECCN: EAR99
Fake Threat In the Open Market: 74
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.21.0075
Other Part Number: BFR182E6327INDKR-ND,
Base Product Number: BFR182
RoHS Status: ROHS3 Compliant
Low-Noise Si Transistors up to 2.5 GHz
RF Transistor NPN 12V 35mA 8GHz 250mW Surface Mount PG-SOT23
RF Transistor NPN 12V 35mA 8GHz 250mW Surface Mount PG-SOT23
RF Transistor NPN 12V 35mA 8GHz 250mW Surface Mount PG-SOT23
Infineon RF Bip Transisitor BFR 182 E632
Infineon RF Bip Transisitor BFR 182 E632
Infineon RF Bip Transisitor BFR 182 E632
RF BIP TRANSISTORS; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:12V; Transition Frequency ft:8GHz; Power Dissipation Pd:250mW; DC Collector Current:35mA; DC Current Gain hFE:100hFE; RF Transistor Case:SOT-23; No. of RoHS Compliant: Yes
Trans GP BJT NPN 12V 0.035A Automotive 3-Pin SOT-23 T/R
RF TRANS NPN 12V 8GHZ SOT23-3
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | Rochester Electronics | DigiKey | RS Components, Ltd. | Newark, An Avnet Company | Utmel Electronic Limited | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Bipolar RF Transistors | RF Transistors | Transistors | Transistors | Bipolar RF Transistors | Transistors | Bipolar RF Transistors | Bipolar RF Transistors |
| Product Number | 283-BFR182E6327HTSA1 | 1325018-BFR182E6327HTSA1 | BFR182E6327HTSA1 | BFR182E6327HTSA1CT-ND | 2587726P | 01AC4782 | 376-BFR182E6327HTSA1 | BFR182E6327HTSA1 |
| Product Name | 12V 8GHZ SOT23 Bipolar Transistor | Discrete Semiconductor Products - Transistors - Bipolar (BJT) - RF | Bipolar RF Transistors | Bipolar Transistors | Rf Bip Transistors; Transistor Polarity Infineon | Trans GP BJT NPN 12V 0.035A Automotive 3-Pin SOT-23 T/R | Discrete Semiconductor Products - Transistors - Bipolar (BJT) | |
| Package Type | Tape & Reel (TR) | SOT3; SOT23; TO-236-3, SC-59, SOT-23-3 | PG-SOT23-3 | SOT23; TO-236-3, SC-59, SOT-23-3 | SOT23; SOT-23 | TO-3; SOT23 | ||
| Packing Method | Tape & Reel (TR) | Tape Reel; Reel - TR | Tape Reel; Tape & Reel (TR) | Tape Reel; Tape & Reel (TR),Cut Tape (CT),Digi-ReelR | ||||
| IC(max) | 35 milliamps | |||||||
| VCEO | 12 volts | 12 volts | 12 volts | |||||
| VCBO | 20 volts |
