Manufacturer: Infineon Technologies
Win Source Part Number: 106987-BCR562E6327HT
Packaging: Reel - TR
Mounting: SMD (SMT)
Frequency - Transition: 150MHz
Transistor Polarity: PNP - Pre-Biased
Resistor - Base (R1) (Ohms): 4.7k
Resistor - Emitter Base (R2) (Ohms): 4.7k
Categories: Discrete Semiconductor Products
Case / Package: PG-SOT23-3
Maximum Current Collector: 500mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 50V
Max Vce (sat): 300mV @ 2.5mA, 50mA
Collector Cut-off Current(Max): 100nA (ICBO)
Typical Gain (hFE) (Min): 60 @ 50mA, 5V
Maximum Power Dissipation: 330mW
Popularity: Medium
Fake Threat In the Open Market: 36 pct.
Supply and Demand Status: Balance
Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50V 500mA 150MHz 330mW Surface Mount PG-SOT23
Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50V 500mA 150MHz 330mW Surface Mount PG-SOT23
Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50V 500mA 150MHz 330mW Surface Mount PG-SOT23
TRANS PREBIAS PNP 50V SOT23 Product overview: BCR562E6327HTSA1 from Infineon Technologies is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 50V, SOT23. Search-friendly keywords include transistor, BJT, switching, amplification, 50V, SOT23, Bipolar Transistor, Single, Pre-Biased Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 292-BCR562E6327HTSA1
Bipolar Transistors - Pre-Biased PNP Silicon Digital TRANSISTOR
TRANS PREBIAS PNP 50V SOT23
TRANS PREBIAS PNP 0.33W SOT23-3
BRT TRANS, 4.7K/4.7KOHM, SOT23; Collector Emitter Voltage V(br)ceo:-50V; Continuous Collector Current Ic:-500mA; Base Input Resistor R1:4.7kohm; Base-Emitter Resistor R2:4.7kohm; Resistor Ratio, R1 / R2:1(Ratio); RF Transistor RoHS Compliant: Yes
| Win Source Electronics | DigiKey | ERSAELECTRONICS PTE. LTD. | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | ODG (Origin Data Global) | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Transistors | Bipolar RF Transistors | Bipolar RF Transistors | Bipolar RF Transistors | Bipolar RF Transistors | Transistors |
| Product Number | 106987-BCR562E6327HTSA1 | BCR562E6327HTSA1TR-ND | 292-BCR562E6327HTSA1 | BCR562E6327HTSA1 | BCR562E6327HTSA1 | BCR562E6327HTSA1 | 03AJ0033 |
| Product Name | TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - BCR562E6327HTSA1 | Single, Pre-Biased Bipolar Transistors | 50V SOT23 Bipolar Transistor | Bipolar Transistors - Pre-Biased | Discrete Semiconductor Products - Transistors - Bipolar (BJT) | Single, Pre-Biased Bipolar Transistors | Brt Trans, 4.7K/4.7Kohm, Sot23; Collector Emitter Voltage V(Br)Ceo Infineon |
| Polarity | PNP; PNP - Pre-Biased | PNP | PNP - Pre-Biased; PNP | ||||
| Package Type | SOT3; PG-SOT23-3 | SOT23; TO-236-3, SC-59, SOT-23-3 | Tape & Reel (TR) | SOT23; TO-236-3, SC-59, SOT-23-3 | TO-3 | ||
| Packing Method | Tape & Reel (TR) | Tape Reel; Tape & Reel (TR),Cut Tape (CT),Digi-ReelR | |||||
| IC(max) | 500000 milliamps | 500 milliamps | 500 milliamps | ||||
| VCEO | 50 volts | 50 volts | 50 volts |
