Infineon Technologies AG Bipolar RF Transistors BFP620E7764BTSA1

Description
RF Transistor NPN 2.8V 80mA 65GHz 185mW Surface Mount PG-SOT343-4
Request a Quote Datasheet
Description
RF Transistor NPN 2.8V 80mA 65GHz 185mW Surface Mount PG-SOT343-4
Request a Quote Datasheet

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Product
Description
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Bipolar RF Transistors - BFP620E7764BTSA1TR-ND - DigiKey
Thief River Falls, MN, United States
Bipolar RF Transistors
BFP620E7764BTSA1TR-ND
Bipolar RF Transistors BFP620E7764BTSA1TR-ND
RF Transistor NPN 2.8V 80mA 65GHz 185mW Surface Mount PG-SOT343-4

RF Transistor NPN 2.8V 80mA 65GHz 185mW Surface Mount PG-SOT343-4

Buy Now Datasheet
TRANSISTORS - RF Transistors (BJT) - BFP620E7764BTSA1 - 1023245-BFP620E7764BTSA1 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - RF Transistors (BJT) - BFP620E7764BTSA1
1023245-BFP620E7764BTSA1
TRANSISTORS - RF Transistors (BJT) - BFP620E7764BTSA1 1023245-BFP620E7764BTSA1
Manufacturer: Infineon Technologies Win Source Part Number: 1023245-BFP620E7764B TSA1 Packaging: Reel - TR Mounting: SMD (SMT) Gain: 21.5dB Frequency - Transition: 65GHz Transistor Polarity: NPN Noise Figure (dB Typ @ f): 0.7dB to 1.3dB @ 1.8GHz to 6GHz Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: 150°C (TJ) Case / Package: PG-SOT343-4 Maximum Current Collector: 80mA VCEO Maximum Collector-Emitter Breakdown Voltage: 2.8V Typical Gain (hFE) (Min): 110 @ 50mA, 1.5V Maximum Power Dissipation: 185mW Popularity: Medium Fake Threat In the Open Market: 40 pct. Supply and Demand Status: Balance Quantity per package: 3k pcs

Manufacturer: Infineon Technologies
Win Source Part Number: 1023245-BFP620E7764BTSA1
Packaging: Reel - TR
Mounting: SMD (SMT)
Gain: 21.5dB
Frequency - Transition: 65GHz
Transistor Polarity: NPN
Noise Figure (dB Typ @ f): 0.7dB to 1.3dB @ 1.8GHz to 6GHz
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: 150°C (TJ)
Case / Package: PG-SOT343-4
Maximum Current Collector: 80mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 2.8V
Typical Gain (hFE) (Min): 110 @ 50mA, 1.5V
Maximum Power Dissipation: 185mW
Popularity: Medium
Fake Threat In the Open Market: 40 pct.
Supply and Demand Status: Balance
Quantity per package: 3k pcs

Buy Now Datasheet
Bipolar RF Transistors - BFP620E7764BTSA1 - ODG (Origin Data Global)
Shenzhen, China
Bipolar RF Transistors
BFP620E7764BTSA1
Bipolar RF Transistors BFP620E7764BTSA1
RF TRANS NPN 2.8V 65GHZ SOT343-4

RF TRANS NPN 2.8V 65GHZ SOT343-4

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - BFP620E7764BTSA1 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
BFP620E7764BTSA1
Discrete Semiconductor Products - Transistors - Bipolar (BJT) BFP620E7764BTSA1
RF TRANS NPN 2.8V 65GHZ SOT343-4

RF TRANS NPN 2.8V 65GHZ SOT343-4

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics ODG (Origin Data Global) Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors RF Transistors Bipolar RF Transistors Bipolar RF Transistors
Product Number BFP620E7764BTSA1TR-ND 1023245-BFP620E7764BTSA1 BFP620E7764BTSA1 BFP620E7764BTSA1
Product Name Bipolar RF Transistors TRANSISTORS - RF Transistors (BJT) - BFP620E7764BTSA1 Bipolar RF Transistors Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity NPN NPN; NPN NPN; NPN
Package Type SC-82A, SOT-343 SOT3; PG-SOT343-4 SC-82A, SOT-343
Packing Method Tape Reel; Reel - TR Tape Reel; Tape & Reel (TR),Cut Tape (CT),Digi-ReelR
TJ 150 C (302 F) 150 C (302 F)
Power Gain 110 dB 21.5 dB
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