Infineon Technologies AG Bipolar RF Transistors BFP620E7764BTSA1

Description
RF TRANS NPN 2.8V 65GHZ SOT343-4
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Description
RF TRANS NPN 2.8V 65GHZ SOT343-4
Request a Quote Datasheet

Suppliers

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Product
Description
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Bipolar RF Transistors - BFP620E7764BTSA1 - ODG (Origin Data Global)
Shenzhen, China
Bipolar RF Transistors
BFP620E7764BTSA1
Bipolar RF Transistors BFP620E7764BTSA1
RF TRANS NPN 2.8V 65GHZ SOT343-4

RF TRANS NPN 2.8V 65GHZ SOT343-4

Supplier's Site Datasheet
Bipolar RF Transistors - BFP620E7764BTSA1TR-ND - DigiKey
Thief River Falls, MN, United States
Bipolar RF Transistors
BFP620E7764BTSA1TR-ND
Bipolar RF Transistors BFP620E7764BTSA1TR-ND
RF Transistor NPN 2.8V 80mA 65GHz 185mW Surface Mount PG-SOT343-4

RF Transistor NPN 2.8V 80mA 65GHz 185mW Surface Mount PG-SOT343-4

Buy Now Datasheet
TRANSISTORS - RF Transistors (BJT) - BFP620E7764BTSA1 - 1023245-BFP620E7764BTSA1 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - RF Transistors (BJT) - BFP620E7764BTSA1
1023245-BFP620E7764BTSA1
TRANSISTORS - RF Transistors (BJT) - BFP620E7764BTSA1 1023245-BFP620E7764BTSA1
Manufacturer: Infineon Technologies Win Source Part Number: 1023245-BFP620E7764B TSA1 Packaging: Reel - TR Mounting: SMD (SMT) Gain: 21.5dB Frequency - Transition: 65GHz Transistor Polarity: NPN Noise Figure (dB Typ @ f): 0.7dB to 1.3dB @ 1.8GHz to 6GHz Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: 150°C (TJ) Case / Package: PG-SOT343-4 Maximum Current Collector: 80mA VCEO Maximum Collector-Emitter Breakdown Voltage: 2.8V Typical Gain (hFE) (Min): 110 @ 50mA, 1.5V Maximum Power Dissipation: 185mW Popularity: Medium Fake Threat In the Open Market: 40 pct. Supply and Demand Status: Balance Quantity per package: 3k pcs

Manufacturer: Infineon Technologies
Win Source Part Number: 1023245-BFP620E7764BTSA1
Packaging: Reel - TR
Mounting: SMD (SMT)
Gain: 21.5dB
Frequency - Transition: 65GHz
Transistor Polarity: NPN
Noise Figure (dB Typ @ f): 0.7dB to 1.3dB @ 1.8GHz to 6GHz
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: 150°C (TJ)
Case / Package: PG-SOT343-4
Maximum Current Collector: 80mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 2.8V
Typical Gain (hFE) (Min): 110 @ 50mA, 1.5V
Maximum Power Dissipation: 185mW
Popularity: Medium
Fake Threat In the Open Market: 40 pct.
Supply and Demand Status: Balance
Quantity per package: 3k pcs

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - BFP620E7764BTSA1 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
BFP620E7764BTSA1
Discrete Semiconductor Products - Transistors - Bipolar (BJT) BFP620E7764BTSA1
RF TRANS NPN 2.8V 65GHZ SOT343-4

RF TRANS NPN 2.8V 65GHZ SOT343-4

Supplier's Site

Technical Specifications

  ODG (Origin Data Global) DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Bipolar RF Transistors Transistors RF Transistors Bipolar RF Transistors
Product Number BFP620E7764BTSA1 BFP620E7764BTSA1TR-ND 1023245-BFP620E7764BTSA1 BFP620E7764BTSA1
Product Name Bipolar RF Transistors Bipolar RF Transistors TRANSISTORS - RF Transistors (BJT) - BFP620E7764BTSA1 Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity NPN; NPN NPN NPN; NPN
Package Type SC-82A, SOT-343 SC-82A, SOT-343 SOT3; PG-SOT343-4
IC(max) 80 milliamps
VCEO 2.8 volts 2.8 volts
Power Gain 21.5 dB 110 dB
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