Infineon Technologies AG Bipolar RF Transistors BFP620E7764BTSA1

RF TRANS NPN 2.8V 65GHZ SOT343-4

Manufacturer: Infineon Technologies
Win Source Part Number: 1023245-BFP620E7764BTSA1
Packaging: Reel - TR
Mounting: SMD (SMT)
Gain: 21.5dB
Frequency - Transition: 65GHz
Transistor Polarity: NPN
Noise Figure (dB Typ @ f): 0.7dB to 1.3dB @ 1.8GHz to 6GHz
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: 150°C (TJ)
Case / Package: PG-SOT343-4
Maximum Current Collector: 80mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 2.8V
Typical Gain (hFE) (Min): 110 @ 50mA, 1.5V
Maximum Power Dissipation: 185mW
Popularity: Medium
Fake Threat In the Open Market: 40 pct.
Supply and Demand Status: Balance
Quantity per package: 3k pcs

RF Transistor NPN 2.8V 80mA 65GHz 185mW Surface Mount PG-SOT343-4

RF TRANS NPN 2.8V 65GHZ SOT343-4 Product overview: BFP620E7764BTSA1 from Infineon Technologies is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 2.8V, 65GHZ. Search-friendly keywords include transistor, BJT, switching, amplification, 2.8V, 65GHZ, Bipolar Transistor, Bipolar RF Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 283-BFP620E7764BTSA1 can be used for catalog matching and distributor lookup.