Infineon Technologies AG TRANSISTORS - RF Transistors (BJT) - BF770A BF770A

Description
Manufacturer: Infineon Technologies Win Source Part Number: 201047-BF770A Packaging: Reel - TR Mounting: SMD (SMT) Gain: 9.5dB to 14.5dB Frequency - Transition: 6GHz Transistor Polarity: NPN Noise Figure (dB Typ @ f): 1.5dB to 2.6dB @ 900MHz to 1.8GHz Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: 150°C (TJ) Case / Package: PG-SOT23-3 Maximum Current Collector: 90mA VCEO Maximum Collector-Emitter Breakdown Voltage: 12V Typical Gain (hFE) (Min): 70 @ 30mA, 8V Maximum Power Dissipation: 300mW Popularity: Medium Fake Threat In the Open Market: 71 pct. Supply and Demand Status: Balance
  • TRANSISTORS - RF Transistors (BJT) - BF770A - 201047-BF770A - Win Source Electronics
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Description
Manufacturer: Infineon Technologies Win Source Part Number: 201047-BF770A Packaging: Reel - TR Mounting: SMD (SMT) Gain: 9.5dB to 14.5dB Frequency - Transition: 6GHz Transistor Polarity: NPN Noise Figure (dB Typ @ f): 1.5dB to 2.6dB @ 900MHz to 1.8GHz Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: 150°C (TJ) Case / Package: PG-SOT23-3 Maximum Current Collector: 90mA VCEO Maximum Collector-Emitter Breakdown Voltage: 12V Typical Gain (hFE) (Min): 70 @ 30mA, 8V Maximum Power Dissipation: 300mW Popularity: Medium Fake Threat In the Open Market: 71 pct. Supply and Demand Status: Balance
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TRANSISTORS - RF Transistors (BJT) - BF770A - 201047-BF770A - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - RF Transistors (BJT) - BF770A
201047-BF770A
TRANSISTORS - RF Transistors (BJT) - BF770A 201047-BF770A
Manufacturer: Infineon Technologies Win Source Part Number: 201047-BF770A Packaging: Reel - TR Mounting: SMD (SMT) Gain: 9.5dB to 14.5dB Frequency - Transition: 6GHz Transistor Polarity: NPN Noise Figure (dB Typ @ f): 1.5dB to 2.6dB @ 900MHz to 1.8GHz Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: 150°C (TJ) Case / Package: PG-SOT23-3 Maximum Current Collector: 90mA VCEO Maximum Collector-Emitter Breakdown Voltage: 12V Typical Gain (hFE) (Min): 70 @ 30mA, 8V Maximum Power Dissipation: 300mW Popularity: Medium Fake Threat In the Open Market: 71 pct. Supply and Demand Status: Balance

Manufacturer: Infineon Technologies
Win Source Part Number: 201047-BF770A
Packaging: Reel - TR
Mounting: SMD (SMT)
Gain: 9.5dB to 14.5dB
Frequency - Transition: 6GHz
Transistor Polarity: NPN
Noise Figure (dB Typ @ f): 1.5dB to 2.6dB @ 900MHz to 1.8GHz
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: 150°C (TJ)
Case / Package: PG-SOT23-3
Maximum Current Collector: 90mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 12V
Typical Gain (hFE) (Min): 70 @ 30mA, 8V
Maximum Power Dissipation: 300mW
Popularity: Medium
Fake Threat In the Open Market: 71 pct.
Supply and Demand Status: Balance

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Technical Specifications

  Win Source Electronics
Product Category RF Transistors
Product Number 201047-BF770A
Product Name TRANSISTORS - RF Transistors (BJT) - BF770A
Polarity NPN; NPN
Package Type SOT3; SOT23; PG-SOT23-3
Packing Method Tape Reel; Reel - TR
TJ 150 C (302 F)
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