Infineon Technologies AG Bipolar RF Transistors BF799WE6327

Description
High Linearity Si- and SiGe:C-Transistors for use up to 6 GHz
Request a Quote Datasheet
Description
High Linearity Si- and SiGe:C-Transistors for use up to 6 GHz
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
 - BF799WE6327 - Rochester Electronics
Newburyport, MA, United States
High Linearity Si- and SiGe:C-Transistors for use up to 6 GHz

High Linearity Si- and SiGe:C-Transistors for use up to 6 GHz

Supplier's Site Datasheet
Bipolar RF Transistors - BF799WE6327 - ODG (Origin Data Global)
Shenzhen, China
Bipolar RF Transistors
BF799WE6327
Bipolar RF Transistors BF799WE6327
RF TRANSISTOR, NPN

RF TRANSISTOR, NPN

Supplier's Site Datasheet

Technical Specifications

  Rochester Electronics ODG (Origin Data Global)
Product Category Transistors Bipolar RF Transistors
Product Number BF799WE6327 BF799WE6327
Product Name Bipolar RF Transistors
Package Type SOT323; SOT-323-3 SOT323; SC-70, SOT-323
Polarity NPN; NPN
IC(max) 35 milliamps
VCEO 20 volts
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