Infineon Technologies AG TRANSISTORS - RF Transistors (BJT) - BFR183T BFR183T

Manufacturer: Infineon Technologies
Win Source Part Number: 201167-BFR183T
Packaging: Reel - TR
Mounting: SMD (SMT)
Gain: 19.5dB
Frequency - Transition: 8GHz
Transistor Polarity: NPN
Noise Figure (dB Typ @ f): 1.2dB to 2dB @ 900MHz to 1.8GHz
Family Name: BFR183T
Categories: Discrete Semiconductor Products
Temperature Range - Operating: 150°C (TJ)
Case / Package: PG-SC-75
Maximum Current Collector: 65mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 12V
Typical Gain (hFE) (Min): 50 @ 15mA, 8V
Maximum Power Dissipation: 250mW
Alternative Parts (Cross-Reference): PBR951,215; 2SC3606(TE85); PBR951;
Introduction Date: January 10, 1999
ECCN: EAR99
Estimated EOL Date: Not Applicable
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 48 pct.
Supply and Demand Status: Sufficient

TRANSISTOR RF NPN 12V SC-75 Product overview: BFR183T from Infineon Technologies is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 12V. Search-friendly keywords include transistor, BJT, switching, amplification, 12V, Bipolar Transistor, Bipolar RF Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 283-BFR183T can be used for catalog matching and distributor lookup.