Infineon Technologies AG TRANSISTORS - RF Transistors (BJT) - BFG19S E6327 BFG19S E6327

Description
Manufacturer: Infineon Technologies Win Source Part Number: 201153-BFG19S E6327 Packaging: Reel - TR Mounting: SMD (SMT) Gain: 14dB to 8.5dB Frequency - Transition: 5.5GHz Transistor Polarity: NPN Noise Figure (dB Typ @ f): 2dB to 3dB @ 900MHz to 1.8GHz Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: 150°C (TJ) Case / Package: PG-SOT223-4 Maximum Current Collector: 210mA VCEO Maximum Collector-Emitter Breakdown Voltage: 15V Typical Gain (hFE) (Min): 70 @ 70mA, 8V Maximum Power Dissipation: 1W Alternative Parts (Cross-Reference): BFG541; BFG19S; BFG19SE6327; BFG235E6327; Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 51 pct. Supply and Demand Status: Sufficient
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Description
Manufacturer: Infineon Technologies Win Source Part Number: 201153-BFG19S E6327 Packaging: Reel - TR Mounting: SMD (SMT) Gain: 14dB to 8.5dB Frequency - Transition: 5.5GHz Transistor Polarity: NPN Noise Figure (dB Typ @ f): 2dB to 3dB @ 900MHz to 1.8GHz Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: 150°C (TJ) Case / Package: PG-SOT223-4 Maximum Current Collector: 210mA VCEO Maximum Collector-Emitter Breakdown Voltage: 15V Typical Gain (hFE) (Min): 70 @ 70mA, 8V Maximum Power Dissipation: 1W Alternative Parts (Cross-Reference): BFG541; BFG19S; BFG19SE6327; BFG235E6327; Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 51 pct. Supply and Demand Status: Sufficient
Request a Quote Datasheet

Suppliers

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Product
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Supplier Links
TRANSISTORS - RF Transistors (BJT) - BFG19S E6327 - 201153-BFG19S E6327 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - RF Transistors (BJT) - BFG19S E6327
201153-BFG19S E6327
TRANSISTORS - RF Transistors (BJT) - BFG19S E6327 201153-BFG19S E6327
Manufacturer: Infineon Technologies Win Source Part Number: 201153-BFG19S E6327 Packaging: Reel - TR Mounting: SMD (SMT) Gain: 14dB to 8.5dB Frequency - Transition: 5.5GHz Transistor Polarity: NPN Noise Figure (dB Typ @ f): 2dB to 3dB @ 900MHz to 1.8GHz Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: 150°C (TJ) Case / Package: PG-SOT223-4 Maximum Current Collector: 210mA VCEO Maximum Collector-Emitter Breakdown Voltage: 15V Typical Gain (hFE) (Min): 70 @ 70mA, 8V Maximum Power Dissipation: 1W Alternative Parts (Cross-Reference): BFG541; BFG19S; BFG19SE6327; BFG235E6327; Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 51 pct. Supply and Demand Status: Sufficient

Manufacturer: Infineon Technologies
Win Source Part Number: 201153-BFG19S E6327
Packaging: Reel - TR
Mounting: SMD (SMT)
Gain: 14dB to 8.5dB
Frequency - Transition: 5.5GHz
Transistor Polarity: NPN
Noise Figure (dB Typ @ f): 2dB to 3dB @ 900MHz to 1.8GHz
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: 150°C (TJ)
Case / Package: PG-SOT223-4
Maximum Current Collector: 210mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 15V
Typical Gain (hFE) (Min): 70 @ 70mA, 8V
Maximum Power Dissipation: 1W
Alternative Parts (Cross-Reference): BFG541; BFG19S; BFG19SE6327; BFG235E6327;
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 51 pct.
Supply and Demand Status: Sufficient

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Technical Specifications

  Win Source Electronics
Product Category RF Transistors
Product Number 201153-BFG19S E6327
Product Name TRANSISTORS - RF Transistors (BJT) - BFG19S E6327
Polarity NPN; NPN
Package Type SOT3; PG-SOT223-4
Packing Method Tape Reel; Reel - TR
TJ 150 C (302 F)
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