Infineon Technologies AG 12V SOT-23 Bipolar Transistor BF770AE6327

Description
TRANSISTOR RF NPN 12V SOT-23 Product overview: BF770AE6327 from Infineon Technologies is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 12V, SOT-23. Search-friendly keywords include transistor, BJT, switching, amplification, 12V, SOT-23, Bipolar Transistor, Bipolar RF Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 283-BF770AE6327 can be used for catalog matching and distributor lookup.
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Description
TRANSISTOR RF NPN 12V SOT-23 Product overview: BF770AE6327 from Infineon Technologies is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 12V, SOT-23. Search-friendly keywords include transistor, BJT, switching, amplification, 12V, SOT-23, Bipolar Transistor, Bipolar RF Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 283-BF770AE6327 can be used for catalog matching and distributor lookup.
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Suppliers

Company
Product
Description
Supplier Links
Singapore, Singapore
12V SOT-23 Bipolar Transistor
283-BF770AE6327
12V SOT-23 Bipolar Transistor 283-BF770AE6327
TRANSISTOR RF NPN 12V SOT-23 Product overview: BF770AE6327 from Infineon Technologies is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 12V, SOT-23. Search-friendly keywords include transistor, BJT, switching, amplification, 12V, SOT-23, Bipolar Transistor, Bipolar RF Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 283-BF770AE6327 can be used for catalog matching and distributor lookup.

TRANSISTOR RF NPN 12V SOT-23 Product overview: BF770AE6327 from Infineon Technologies is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 12V, SOT-23. Search-friendly keywords include transistor, BJT, switching, amplification, 12V, SOT-23, Bipolar Transistor, Bipolar RF Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 283-BF770AE6327 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
TRANSISTORS - RF Transistors (BJT) - BF770AE6327 - 201048-BF770AE6327 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - RF Transistors (BJT) - BF770AE6327
201048-BF770AE6327
TRANSISTORS - RF Transistors (BJT) - BF770AE6327 201048-BF770AE6327
Manufacturer: Infineon Technologies Win Source Part Number: 201048-BF770AE6327 Packaging: Reel - TR Mounting: SMD (SMT) Gain: 9.5dB to 14.5dB Frequency - Transition: 6GHz Transistor Polarity: NPN Noise Figure (dB Typ @ f): 1.5dB to 2.6dB @ 900MHz to 1.8GHz Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: 150°C (TJ) Case / Package: PG-SOT23-3 Maximum Current Collector: 90mA VCEO Maximum Collector-Emitter Breakdown Voltage: 12V Typical Gain (hFE) (Min): 70 @ 30mA, 8V Maximum Power Dissipation: 300mW Popularity: Medium Fake Threat In the Open Market: 71 pct. Supply and Demand Status: Sufficient

Manufacturer: Infineon Technologies
Win Source Part Number: 201048-BF770AE6327
Packaging: Reel - TR
Mounting: SMD (SMT)
Gain: 9.5dB to 14.5dB
Frequency - Transition: 6GHz
Transistor Polarity: NPN
Noise Figure (dB Typ @ f): 1.5dB to 2.6dB @ 900MHz to 1.8GHz
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: 150°C (TJ)
Case / Package: PG-SOT23-3
Maximum Current Collector: 90mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 12V
Typical Gain (hFE) (Min): 70 @ 30mA, 8V
Maximum Power Dissipation: 300mW
Popularity: Medium
Fake Threat In the Open Market: 71 pct.
Supply and Demand Status: Sufficient

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Technical Specifications

  ERSAELECTRONICS PTE. LTD. Win Source Electronics
Product Category Bipolar RF Transistors RF Transistors
Product Number 283-BF770AE6327 201048-BF770AE6327
Product Name 12V SOT-23 Bipolar Transistor TRANSISTORS - RF Transistors (BJT) - BF770AE6327
Polarity NPN NPN; NPN
Package Type Reel - TR SOT3; SOT23; PG-SOT23-3
Packing Method Reel - TR Tape Reel; Reel - TR
Noise Figure 1.5 dB 1.5 dB
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