Infineon Technologies AG TRANSISTORS - RF Transistors (BJT) - BF770AE6327 BF770AE6327

Description
Manufacturer: Infineon Technologies Win Source Part Number: 201048-BF770AE6327 Packaging: Reel - TR Mounting: SMD (SMT) Gain: 9.5dB to 14.5dB Frequency - Transition: 6GHz Transistor Polarity: NPN Noise Figure (dB Typ @ f): 1.5dB to 2.6dB @ 900MHz to 1.8GHz Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: 150°C (TJ) Case / Package: PG-SOT23-3 Maximum Current Collector: 90mA VCEO Maximum Collector-Emitter Breakdown Voltage: 12V Typical Gain (hFE) (Min): 70 @ 30mA, 8V Maximum Power Dissipation: 300mW Popularity: Medium Fake Threat In the Open Market: 71 pct. Supply and Demand Status: Sufficient
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Description
Manufacturer: Infineon Technologies Win Source Part Number: 201048-BF770AE6327 Packaging: Reel - TR Mounting: SMD (SMT) Gain: 9.5dB to 14.5dB Frequency - Transition: 6GHz Transistor Polarity: NPN Noise Figure (dB Typ @ f): 1.5dB to 2.6dB @ 900MHz to 1.8GHz Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: 150°C (TJ) Case / Package: PG-SOT23-3 Maximum Current Collector: 90mA VCEO Maximum Collector-Emitter Breakdown Voltage: 12V Typical Gain (hFE) (Min): 70 @ 30mA, 8V Maximum Power Dissipation: 300mW Popularity: Medium Fake Threat In the Open Market: 71 pct. Supply and Demand Status: Sufficient
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Suppliers

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TRANSISTORS - RF Transistors (BJT) - BF770AE6327 - 201048-BF770AE6327 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - RF Transistors (BJT) - BF770AE6327
201048-BF770AE6327
TRANSISTORS - RF Transistors (BJT) - BF770AE6327 201048-BF770AE6327
Manufacturer: Infineon Technologies Win Source Part Number: 201048-BF770AE6327 Packaging: Reel - TR Mounting: SMD (SMT) Gain: 9.5dB to 14.5dB Frequency - Transition: 6GHz Transistor Polarity: NPN Noise Figure (dB Typ @ f): 1.5dB to 2.6dB @ 900MHz to 1.8GHz Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: 150°C (TJ) Case / Package: PG-SOT23-3 Maximum Current Collector: 90mA VCEO Maximum Collector-Emitter Breakdown Voltage: 12V Typical Gain (hFE) (Min): 70 @ 30mA, 8V Maximum Power Dissipation: 300mW Popularity: Medium Fake Threat In the Open Market: 71 pct. Supply and Demand Status: Sufficient

Manufacturer: Infineon Technologies
Win Source Part Number: 201048-BF770AE6327
Packaging: Reel - TR
Mounting: SMD (SMT)
Gain: 9.5dB to 14.5dB
Frequency - Transition: 6GHz
Transistor Polarity: NPN
Noise Figure (dB Typ @ f): 1.5dB to 2.6dB @ 900MHz to 1.8GHz
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: 150°C (TJ)
Case / Package: PG-SOT23-3
Maximum Current Collector: 90mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 12V
Typical Gain (hFE) (Min): 70 @ 30mA, 8V
Maximum Power Dissipation: 300mW
Popularity: Medium
Fake Threat In the Open Market: 71 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
Singapore, Singapore
12V SOT-23 Bipolar Transistor
283-BF770AE6327
12V SOT-23 Bipolar Transistor 283-BF770AE6327
TRANSISTOR RF NPN 12V SOT-23 Product overview: BF770AE6327 from Infineon Technologies is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 12V, SOT-23. Search-friendly keywords include transistor, BJT, switching, amplification, 12V, SOT-23, Bipolar Transistor, Bipolar RF Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 283-BF770AE6327 can be used for catalog matching and distributor lookup.

TRANSISTOR RF NPN 12V SOT-23 Product overview: BF770AE6327 from Infineon Technologies is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 12V, SOT-23. Search-friendly keywords include transistor, BJT, switching, amplification, 12V, SOT-23, Bipolar Transistor, Bipolar RF Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 283-BF770AE6327 can be used for catalog matching and distributor lookup.

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Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD.
Product Category RF Transistors Bipolar RF Transistors
Product Number 201048-BF770AE6327 283-BF770AE6327
Product Name TRANSISTORS - RF Transistors (BJT) - BF770AE6327 12V SOT-23 Bipolar Transistor
Polarity NPN; NPN NPN
Package Type SOT3; SOT23; PG-SOT23-3 Reel - TR
Packing Method Tape Reel; Reel - TR Reel - TR
TJ 150 C (302 F) 150 C (302 F)
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